Analysis of equivalent reflectivity of vertical-cavity semiconductor optical amplifiers

LU Jing; LUO Bin

doi:10.7510/jgjs.issn.1001-3806.2019.02.005

LASER TECHNOLOGY > 2019 > 43(2): 174-178. > DOI: 10.7510/jgjs.issn.1001-3806.2019.02.005

LU Jing, LUO Bin. Analysis of equivalent reflectivity of vertical-cavity semiconductor optical amplifiers[J]. LASER TECHNOLOGY, 2019, 43(2): 174-178. DOI: 10.7510/jgjs.issn.1001-3806.2019.02.005

Citation:

LU Jing, LUO Bin. Analysis of equivalent reflectivity of vertical-cavity semiconductor optical amplifiers[J]. LASER TECHNOLOGY, 2019, 43(2): 174-178. DOI: 10.7510/jgjs.issn.1001-3806.2019.02.005

Citation:

LU Jing, LUO Bin. Analysis of equivalent reflectivity of vertical-cavity semiconductor optical amplifiers[J]. LASER TECHNOLOGY, 2019, 43(2): 174-178. DOI: 10.7510/jgjs.issn.1001-3806.2019.02.005

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Analysis of equivalent reflectivity of vertical-cavity semiconductor optical amplifiers

LU Jing^1,2,
LUO Bin^1, ,

1.
School of Information Science & Technology, Southwest Jiaotong University, Chengdu 610031, China
2.
School of Electronics and Internet of Things, Chongqing College of Electronic Engineering, Chongqing 400030, China

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Received Date: May 09, 2018
Revised Date: July 22, 2018
Published Date: March 24, 2019

Graphical Abstract

Abstract

Abstract

In order to optimize the performance of vertical cavity semiconductor optical amplifiers (VCSOA) in different applications and obtain accurate reflectivity with the general calculation method, considering the characteristics of light field distribution inside the device, the equivalent reflectivity of the distributed Bragg reflector (DBR) and the full width at half maximum of the beam in the device were obtained by using angular spectrum theory and transmission matrix method.The theoretical analysis and experimental verification were carried out.The results show that the equivalent reflectivity increases with the increase of structure period.However, when the period is greater than 25, it will not change any more.Compared with the case of normal incidence only, the revised equivalent reflectivity of DBR is less 2%~4%.Equivalent reflectance decreases with the increase of full width at half maximum θ_FWHM.The study provides theoretical guidance for accurately calculating the effect of stack number on equivalent reflectivity of DBR and optimizing the performance of VCSOA.
- lasers,
- reflectivity,
- transfer matrix method,
- angular spectrum,
- vertical cavity semiconductor optical amplifier,
- distributed Bragg reflector

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References (20)

References

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