Theoretical analysis of the gain of vertical cavity semiconductor optical amplifier

QIN Zhang-miao; LUO Bin; PAN Wei

Considering the fact that power injection factor of the input signal is hard to evaluate when gain saturation is analyzed with existing rate equation models of vertical cavity semiconductor optical amplifier(VCSOA) according to the boundary condition of Fabry-Perot resonator,a gain model of VCSOA is established by using traveling-wave equation and position dependent carrier equation and employing gain enhancement factor which varies with axial position to describe the standing wave effect in a micro-cavity.After finding the self-consistent solution of equations based on the model,the distributions of carrier and photon in cavity are presented.Meanwhile,the reflection gain is investigated and agrees with the theoretical and experimental data.

Corresponding author: LUO Bin, hclu@home.swjtu.edu.cn;

1. School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China

Received Date: 2005-09-30

Accepted Date: 2006-03-23

Available Online: 2006-09-25

Abstract: Considering the fact that power injection factor of the input signal is hard to evaluate when gain saturation is analyzed with existing rate equation models of vertical cavity semiconductor optical amplifier(VCSOA) according to the boundary condition of Fabry-Perot resonator,a gain model of VCSOA is established by using traveling-wave equation and position dependent carrier equation and employing gain enhancement factor which varies with axial position to describe the standing wave effect in a micro-cavity.After finding the self-consistent solution of equations based on the model,the distributions of carrier and photon in cavity are presented.Meanwhile,the reflection gain is investigated and agrees with the theoretical and experimental data.

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Reference (9)

[1]	DENG G,PAN W,LUO Bin et al.Theoretical analysis of the loopwidth control of bistablity in VCSOA[J].Laser Technology,2005,29(1):74～76(in Chinese).
[2]	TOMBLING C,SAITOH T,MUKAI T.Performance predictions for vertical-cavity semiconductor laser amplifiers[J].IEEE J Q E,1994,30(11):2491～2499.
[3]	PIPREK J,BJoRLIN E S,BOWERS J E.Design and analysis of vertical-cavity semiconductor optical amplifiers[J].IEEE J Q E,2001,37(1):127～134.
[4]	BJoRLIN E S,KIMURA T,BOWERS J E.Carrier-confined vertical-cavity semiconductor optical amplifiers for higher gain and efficiency[J].IEEE Journal of Selected Topics in Quantum Electronics,2003,9(5):1374～1385.
[5]	ADAMS M J,COLLINS J V,HENNING I D.Analysis of semiconductor laser optical amplifiers[J].Proc IEEE,1985,132(1):58～63.
[6]	CORZINE S W,GEELS R S,SCOTT J W et al.Design of Fabry-Perot surface-emitting lasers with a periodic gain structure[J].IEEE J Q E,1989,25(6):1513～1524.
[7]	YONG J C L,RORISON J M,WHITE I H.1.3μm quantum-wellInGaAsP,AlGaInAs,and InGaAsN laser material gain:a theoretical study[J].IEEE J Q E,2002,38(12):1553～1564.
[8]	BJoRLIN E S,RIOU B,ABRAHAM P et al.Long wavelength vertical-cavity semiconductor optical amplifiers[J].IEEE J Q E,2001,37(2):274～281.
[9]	LEWEN R,STREUBEL K,KARLSSON A et al.Experimental demonstration of a multifunctional long-wavelength vertical-cavity laser amplifier-detector[J].IEEE Photonics Technology Letters,1998,10(8):1067～1069.

Theoretical analysis of the gain of vertical cavity semiconductor optical amplifier

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References

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通讯作者: 陈斌, bchen63@163.com

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