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Volume 31 Issue 2
May  2010
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Study on optical bandwidth characteristic of vertical cavity semiconductor optical amplifiers

  • Corresponding author: LUO Bin, hclu@home.swjtu.edu.cn
  • Received Date: 2006-01-17
    Accepted Date: 2006-03-21
  • Based on the transfer matrix method,the effects of the pump optical power,the distributed Bragger reflector(DBR) periods and the intensity of the input optical signal on the optical bandwidth characteristics of vertical cavity semiconductor optical amplifiers(VCSOAs) are simulated numerically.The computer model includes the longitudinal distribution of carrier and optical intensity and the influence of the ununiformity of the refractive index of the material inside the cavity on the propagation of the optical signal.The obtained results agree well with the conclusion of previous literatures.The results show that the enhancement of the pump level will increase the peak gain of VCSOAs and decrease the optical bandwidth simultaneously;reducing the DBR periods will induce larger optical gain bandwidth product.In addition,the intensity of input optical signal will obviously affect the range of the optical bandwidth of VCSOAs.
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    KIMURA T,BJORLIN E S,CHOU H F et al.Optically preamplified receiver at 10,20 and 40Gbit/s using a 1550nm vertical-cavity SOA[J].IEEE Photonics Technology Letters,2005,17(2):456~458.
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    COLE G,BJORLIN E S,WANG C S et al.Widely tunable bottomemitting vertical-caviy SOAs[J].IEEE Photonics Technology Letters,2005,17(12):2526~2528.
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    JIA X J,LUO B,PAN W et al.Research of gain of vertical cavity semiconductor optical amplifiers based on transfer matrix method[J].Laser Technology,2005,29(4):377~379(in Chinese).
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    DENG G,PAN W,LUO B et al.Theoretical analysis of loop width control of bistability in VCSOA[J].Laser Technology,2005,29(1):74~76(in Chinese).
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    PIPREK J,BJORLIN E S,BOWERS J E.Design and analysis of vertical-cavity semiconductor optical amplifiers[J].IEEE J Q E,2001,37(1):127~134.
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    LIM S F,CHANG-HASNAIN C J.A proposal of broad-bandwidth vertical-cavity laser amplifier[J].IEEE Photonics Technology Letters,1995,7(11):1240~1242.
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    WANG G,LUO B,PAN W et al.A transfer-matrix based analysis of vertical-cavity semiconductor optical amplifiers[J].Chinese Physics Letters,2005,22(10):2561~2564.
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    CORZINE S W,GEELS R S,SCOTT J W et al.Design of Fabry-Perot surface-emitting lasers with a periodic gain structure[J].IEEE J Q E,1989,25(6):1513~1523.
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    ZHAO Zh,PAN W,LUO B et al.Numerical analysis on gain properties of vertical-cavity semiconductor optical amplifiers[J].Laser Infrared,2004,34(2):116~118(in Chinese).
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    PIPREK J,BJORLIN E S,BOWERS J E.Optical gain-bandwidth product of vertical-cavity laser amplifiers[J].Electron Lett,2001,37(5):298~299.
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Study on optical bandwidth characteristic of vertical cavity semiconductor optical amplifiers

    Corresponding author: LUO Bin, hclu@home.swjtu.edu.cn
  • 1. School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China

Abstract: Based on the transfer matrix method,the effects of the pump optical power,the distributed Bragger reflector(DBR) periods and the intensity of the input optical signal on the optical bandwidth characteristics of vertical cavity semiconductor optical amplifiers(VCSOAs) are simulated numerically.The computer model includes the longitudinal distribution of carrier and optical intensity and the influence of the ununiformity of the refractive index of the material inside the cavity on the propagation of the optical signal.The obtained results agree well with the conclusion of previous literatures.The results show that the enhancement of the pump level will increase the peak gain of VCSOAs and decrease the optical bandwidth simultaneously;reducing the DBR periods will induce larger optical gain bandwidth product.In addition,the intensity of input optical signal will obviously affect the range of the optical bandwidth of VCSOAs.

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