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表 1和表 2中对国内外LM APD阵列和GM APD阵列的指标进行了对比。国外对激光雷达的研究较早,在探测器技术方面有较多的技术储备,目前研究的方向主要是提高探测器规模和成像性能,并实现大面阵、小型化、多波段、高帧频及低功耗。在探测器技术研究方面,国内与国外仍然存在着一定的差距,由于大规模的APD阵列探测器对各方面技术的要求高,在制作上更难实现,特别是由于半导体工艺的限制以及国外的技术封锁,国内研究单位多集中于线列和小面阵探测的阶段,需要进一步推进大面阵APD阵列探测器研制,提高激光雷达的集成性,实现快速3维成像。
表 1 国内外LM APD阵列指标对比
Table 1. Comparison of LM APD array indicators at home and abroad
国外[4] 国外[6] 国外[2] 国外[13, 15] 国内[27] 国内[32] 国内[36] 年份 2004 2012 2012 2021 2010 2018 2020 波长 1570 nm 1500 nm 1570 nm 0.9 μm~4.3 μm 1064 nm 1064 nm 905 nm 材料 InGaAs HgCdTe HgCdTe HgCdTe — InGaAs/InP Si 阵列规模 128×128 256×256 320×256 2×8 4×4 64×64 128×2 探测距离 0.06 km~1.1 km 7 km~10 km 40 m 1 m~10 km 1.5 km 1 km — 探测精度 15 cm 5 cm@1 km 11 cm 0.05 m 15 cm 15 cm — 像元间距 — — — 64 μm — — 150 μm 表 2 国内外GM APD阵列指标对比
Table 2. Comparison of GM APD array indicators at home and abroad
国外[18] 国外[19] 国外[20-22] 国外[25] 国外[27] 国内[38] 国内[39] 年份 2002 2010 2015 2019 2022 2016 2019 波长 532 nm 1500 nm — 671 nm 550 nm 1570 nm 1064 nm 材料 — InP — — Si InGaAs InGaAs 阵列规模 32×32 32×128 256×256 256×256 16×16 32×32 64×64 探测距离 500 m 3 km 3.5 km 50 m 25 m 3.9 km 300 m 探测精度 15 cm 0.3 m — — 2 cm/2 mm 0.12 m — 像元间距 — — 25 μm 9.18 μm 18.5 μm — —
APD阵列及其成像激光雷达系统的研究进展
Research progress of APD array and its imaging LiDAR system
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摘要: 激光雷达(LiDAR)广泛应用于航天器导航、安防监控、3-D测绘、自动驾驶汽车、军事装备及机器人等领域,具有重要的军事和民用价值。雪崩光电二极管(APD)阵列探测技术在LiDAR的发展过程中发挥着至关重要的作用。介绍了LiDAR和APD阵列的应用背景,综述了APD阵列和LiDAR系统的发展历程和最新进展,最后总结了APD阵列探测技术的发展前景和研究趋势。Abstract: Light detection and ranging (LiDAR) is widely used in spacecraft navigation, security monitoring, 3-D mapping, autonomous vehicle, military equipment, robots, and other fields. It has important military and civil value. Avalanche photodiode (APD) array detection technology plays a vital role in the development of LiDAR. In this paper the background of LiDAR and APD array was first introduced, then the development history and latest progress of APD array and LiDAR system was summarized. Finally, the development prospect and research trend of APD array detection technology was summarized.
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表 1 国内外LM APD阵列指标对比
Table 1. Comparison of LM APD array indicators at home and abroad
国外[4] 国外[6] 国外[2] 国外[13, 15] 国内[27] 国内[32] 国内[36] 年份 2004 2012 2012 2021 2010 2018 2020 波长 1570 nm 1500 nm 1570 nm 0.9 μm~4.3 μm 1064 nm 1064 nm 905 nm 材料 InGaAs HgCdTe HgCdTe HgCdTe — InGaAs/InP Si 阵列规模 128×128 256×256 320×256 2×8 4×4 64×64 128×2 探测距离 0.06 km~1.1 km 7 km~10 km 40 m 1 m~10 km 1.5 km 1 km — 探测精度 15 cm 5 cm@1 km 11 cm 0.05 m 15 cm 15 cm — 像元间距 — — — 64 μm — — 150 μm 表 2 国内外GM APD阵列指标对比
Table 2. Comparison of GM APD array indicators at home and abroad
国外[18] 国外[19] 国外[20-22] 国外[25] 国外[27] 国内[38] 国内[39] 年份 2002 2010 2015 2019 2022 2016 2019 波长 532 nm 1500 nm — 671 nm 550 nm 1570 nm 1064 nm 材料 — InP — — Si InGaAs InGaAs 阵列规模 32×32 32×128 256×256 256×256 16×16 32×32 64×64 探测距离 500 m 3 km 3.5 km 50 m 25 m 3.9 km 300 m 探测精度 15 cm 0.3 m — — 2 cm/2 mm 0.12 m — 像元间距 — — 25 μm 9.18 μm 18.5 μm — — -
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