TAO Hua-feng, YANG Zhong-xiao, NING Yong-gong, TU Jing-jing, Xu Hong-yan. The research of laser treatment of GaN thin film[J]. LASER TECHNOLOGY, 2005, 29(6): 652-653,656.
Citation:
TAO Hua-feng, YANG Zhong-xiao, NING Yong-gong, TU Jing-jing, Xu Hong-yan. The research of laser treatment of GaN thin film[J]. LASER TECHNOLOGY, 2005, 29(6): 652-653,656.
TAO Hua-feng, YANG Zhong-xiao, NING Yong-gong, TU Jing-jing, Xu Hong-yan. The research of laser treatment of GaN thin film[J]. LASER TECHNOLOGY, 2005, 29(6): 652-653,656.
Citation:
TAO Hua-feng, YANG Zhong-xiao, NING Yong-gong, TU Jing-jing, Xu Hong-yan. The research of laser treatment of GaN thin film[J]. LASER TECHNOLOGY, 2005, 29(6): 652-653,656.
Through laser damage experiment,the damage threshold of GaN thin film at 10.6μm is reported,i.e.64J/cm2.To improve the quality of GaN thin film,laser treating experiment is investigated by 10.6μm CO2 laser.The results show that the defect density is decreased great after treatment.Finally,treating mechanism is analyzed.
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