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TAO Hua-feng, YANG Zhong-xiao, NING Yong-gong, TU Jing-jing, Xu Hong-yan. The research of laser treatment of GaN thin film[J]. LASER TECHNOLOGY, 2005, 29(6): 652-653,656.
Citation: TAO Hua-feng, YANG Zhong-xiao, NING Yong-gong, TU Jing-jing, Xu Hong-yan. The research of laser treatment of GaN thin film[J]. LASER TECHNOLOGY, 2005, 29(6): 652-653,656.
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The research of laser treatment of GaN thin film

  • School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology, Chengdu 610054, China

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  • Received Date: August 19, 2004
  • Revised Date: November 16, 2004
  • Published Date: November 24, 2005
    Graphical Abstract
    • Abstract
  • Through laser damage experiment,the damage threshold of GaN thin film at 10.6μm is reported,i.e.64J/cm2.To improve the quality of GaN thin film,laser treating experiment is investigated by 10.6μm CO2 laser.The results show that the defect density is decreased great after treatment.Finally,treating mechanism is analyzed.
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    • References (18)
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