新型光刻技术研究进展
Recent progress of novel photolithography technologies
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摘要: 集成电路光刻作为传统光刻技术的典型代表,支撑着集成电路芯片的快速发展。新一代光刻技术具有工艺多样化、光刻精度高、光刻效率高的优点,在研发新型光电子器件、实现3维微纳结构、构建有序纳米孔通道等方面有很大的潜力。回顾了近些年来涌现的多种新型光刻技术,分析了各自的特征及在新型纳米电子、光子器件、能源、传感等领域中的应用。对未来光刻技术的发展方向进行了展望。Abstract: Integrated circuit(IC) lithography, as a typical representative of traditional lithography technology, supports the rapid development of integrated circuit chips. The new generation of photolithography technology has the advantages of diverse technology, high precision and high efficiency. It has great potential in the development of optoelectronic devices, the realization of 3-D micro-nano structure, and the construction of the ordered nanoscale channels. A variety of new photolithography technologies in recent years have been reviewed. Their characteristics and their applications in nanoelectronics, photonic devices, energy, sensing and other fields have been analyzed. Finally, the development direction of lithography technology in the future is prospected.
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图 1 水基“丝膜”电子束光刻工作示意图[2]
图 2 超短(5nm)沟道碳纳米管场效应晶体管[4]
a—透射电子显微镜截面图b—结构示意图c—扫描电子显微镜顶视图d—转移特性曲线
图 3 新型微纳“超级”镜头[5]
图 4 a—纳米压印结合阳极氧化设计有序AAO模板示意图b~d—不同孔结构的氧化铝AAO周期可控序列扫描电子显微镜图(b—圆形; c—方形; d—三角形) e~j—自补偿微孔序列形成扫描电子显微镜图[23]
图 5 纳米压印的3种方式(热压印、UV压印、卷对卷压印)[29]
图 6 纳米喷射产生机制和电介质球成像[41]
a—激光辐照玻璃微球b, c, d—激光辐照不同大小玻璃微球成像能量示意图e—样品介质球成像示意图
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