32×32 Si Geiger-mode laser focal plane detector
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摘要: 为了满足350 nm~1100 nm波长范围内远距离及微弱激光3维成像探测的需求，提出了一种规模为32×32的盖革模式硅激光焦平面阵列探测器，它主要由硅雪崩光电二极管阵列、读出电路芯片、微透镜阵列、半导体制冷器、引脚网格阵列壳体等元件组成。硅雪崩光电二极管焦平面阵列采用拉通型N+-Π1-P--Π2-P+结构，工作在盖革模式下，通过Si片背面抛磨减薄及盲孔刻蚀技术，实现了纤薄光敏区的加工；读出电路采用主动模式淬灭设计，使电路单元的死时间控制在50 ns以内，并利用一种带相移技术的时间数字转换电路优化方案，在满足时间分辨率不大于2 ns的同时，降低了读出电路芯片的功耗。结果表明，在反向过偏电压14 V、工作温度-40 ℃的条件下，该探测器在850 nm的目标波长可实现20.7%的平均光子探测效率与0.59 kHz的平均暗计数率，时间分辨率为1 ns，有效像元率优于97%。该研究为纤薄型背进光Si基激光焦平面探测器的研制提供了参考。Abstract: A 32×32 Geiger-mode silicon laser focal plane array detector was developed for the long-distance or weak-laser detection of the 3-D imaging system using the wavelength in range of 350 nm~1100 nm. This detector is mainly composed of silicon avalanche photodiode array, readout circuit chips, microlens arrays, semiconductor refrigerators, and pin-grid array shells. The silicon avalanche photodiode focal plane arrays, adopts the structure of pull through N+-Π1-P--Π2-P+ and works at the Geiger mode. The processing of thin photosensitive areas has been achieved through Si wafer back polishing and blind hole etching technology. An active-quenching-mode design was adopted to control the dead time of the circuit unit within 50 ns. An optimized time-to-digital converter circuit scheme with phase shift technology was used to achieve a time resolution within 2 ns while reducing the power consumption of the readout circuit chip. The results show that under the conditions of reverse bias voltage of 14 V and operating temperature of -40 ℃, the detector can achieve an average photon detection efficiency of 20.7% and an average dark counting rate of 0.59 kHz at the target wavelength of 850 nm, with a time resolution of 1 ns and an effective pixel rate better than 97%. This study provides a reference for the development of thin-type back-illuminated silicon-based laser focal plane detectors.
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Keywords:
- sensor technique /
- avalanche focal plane detector /
- Geiger-mode /
- silicon /
- laser 3-D imaging
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图 1 盖革模式硅激光焦平面探测器组成元件示意图
Figure 1. Schematic diagram of Geiger-mode silicon laser focal plane detector module
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图 2 a—GM-APDA光敏芯片结构示意图b，c—进光孔共聚焦显微镜照片
Figure 2. a—structure diagram of the GM-APDA photosensitive chip b, c—confocal microscope photograph of the li-ght entry hole
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图 3 a—高精度时间数字转换电路结构图b—GM-APD单元主动淬灭电路设计框图c—GM-APDA单元主动淬灭电路时序图
Figure 3. a—structure diagram of the high precision time digital conversion circuit b—block diagram of the GM-APD unit active quenching circuit design c—timing diagram of the GM-APDA unit active quenching circuit
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图 4 GM-APDA光敏芯片击穿电压与像元坏点分布测试图
Figure 4. Test diagram of the breakdown voltage and the dead pixels distribution of GM-APDA photosensitive chip
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图 5 a—微透镜阵列表面形貌及尺寸分布测试图b—微透镜阵列安装示意图c—盖革模式硅激光焦平面探测器组件实物图
Figure 5. a—test diagram of the surface morphology and the size distribution of microlens array b—installation diag-ram of microlens array c—photograph of the Geiger-mode silicon laser focal plane detector module
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图 6 a—盖革模式硅激光焦平面探测器组件测试系统示意图b，c—反向偏置电压过偏14 V时盖革模式硅激光焦平面探测器组件的PDE/DCR及盲元分布图
Figure 6. a—diagram of the Geiger-mode silicon laser focal plane detector module test system b, c—test diagram of the PDE/DCR and the dead pixels distribution of Geiger-mode silicon laser focal plane detector module when the reverse bias voltage is overoffset by 14 V
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