Abstract: SiO2 is formed on the monocrystalline silicon(100) substrate by means of high temperatare oxidation,then Yb and Er are embeded in highly pure aluminum,and Yb,Er-co-doped Al2O3 film is produced with middle frequeney sputter technique.The influence of target voltage and deposit rate varying with oxygen flow is discussed.The optimized oxygen flow of deposite oxide film is presented.A strong photoluminescence at 1535nm is detected at the room temperature.Optical film is carved by BCl3 ion beam under optical mask to form square optical waveguide.