Abstract: Optical proximity correction is an effective and essential tool in submicron photolithography.In this paper,based on the theory of wavefront engineering,we presente a new correction method to reduce proximity effects by adding bright and dark figure or feature on the mask and analyzing the mechanism for correcting proximity effect.Some 0.5μm features have been got by using the new correction method in a I line projection system which can only fabricate 0.7μm figure without OPC.The satisfied experiment results are obtained and the advantages or disadvantages are discussed by using different OPC method.