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LU Jing, LUO Bin, PAN Wei, LUO Guang-jun, LI Jian-ping, LIN Yu-ke. Analysis of influencing factors on gain saturation property of vertical-cavity semiconductor optical amplifiers[J]. LASER TECHNOLOGY, 2007, 31(5): 496-499,502.
Citation: LU Jing, LUO Bin, PAN Wei, LUO Guang-jun, LI Jian-ping, LIN Yu-ke. Analysis of influencing factors on gain saturation property of vertical-cavity semiconductor optical amplifiers[J]. LASER TECHNOLOGY, 2007, 31(5): 496-499,502.

Analysis of influencing factors on gain saturation property of vertical-cavity semiconductor optical amplifiers

  • In order to improve the gain saturation property of vertical-cavity semiconductor optical amplifiers(VCSOAs),based on the structure character,applying gain enhancement factor and modifying the boundary condition,the relation between input signal power and photon density was derived to study the gain saturation property.The calculation result was agreement with the experiment.Four factors affecting property of gain saturation were obtained.The results showed that the active region area,top mirror reflectivity,pump power,spontaneous emission factor affected the property of gain saturation.After optimizing the parameter,the input saturation power could arrive-2dBm.It is useful to improve the gain saturation property of VCSOAs.
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