The thermal analysis of ultrashort laser pulse ablation on semiconductor surface

LI Xiao-lu; LI Jun; TAO Xiang-yang

To describe ultrashort laser ablation on semiconductor surface,numerical simulation of the double-temperature equation is performed by finite-difference method.The temperature fields of femtosecond,picosecond pulses laser ablation on semiconductor are showed.The results indicate that metal and semiconductor have the same time of the couple with carrier temperature and lattice temperature.Laser pulse power density is the main factors affecting temperature of carrier,the simulation results are accorded with the experiment reported by others.

Corresponding author: TAO Xiang-yang, xytao@163.com

1. College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang 330022, China;

2. Key laboratory of photoelectric & communication of Jiangxi, Nanchang 330022, China

Received Date: 2006-09-30

Accepted Date: 2006-12-25

Available Online: 2007-12-25

Abstract: To describe ultrashort laser ablation on semiconductor surface,numerical simulation of the double-temperature equation is performed by finite-difference method.The temperature fields of femtosecond,picosecond pulses laser ablation on semiconductor are showed.The results indicate that metal and semiconductor have the same time of the couple with carrier temperature and lattice temperature.Laser pulse power density is the main factors affecting temperature of carrier,the simulation results are accorded with the experiment reported by others.

HTML

Reference (14)

[1]	LI Ch D,WANG D L,LUO L et al.Feasibility of femtosecond laser writing multi-layered bit planes in fused silica for three-demensional optical data storage[J].Chinese Physics Letters,2001,18(4):541～543.
[2]	NI X Ch,WANG Q Y.Finite difference method for thermal analysis of femtosecond-picosecond pulse laser ablation on metal surface[J].Chinese Journal of Lasers,2004,31(3):277～280(in Chinese).
[3]	OSTENDORF A.Precise structuring using femtosecond lasers[J].The Review of Laser Engeering,2002,30(5):221～225.
[4]	MINOSHIMA K,KOWALEVICZ A M,HARTL I et al.Photonic device fabrication in glass by use of nonlinear materials processing with a femtosecond laser oscillator[J].Opt Lett,2001,26(19):1516～1518.
[5]	ZHAO G,CHEN J G,ZHANG J et al.Analytical description of the damage threshold of femtosecond pulses[J].Laser Technology,2006,30(1):90～92(in Chinese).
[6]	YOU M,ZHAO W,CHENG G H et al.Crystallization in PTR glass induced by irradiation of femtosecond lasers[J].Laser Technology,2006,30(1):41～42(in Chinese).
[7]	LIU Zh,LI R X,YU W et al.Heating of planar metal targets by ultrashort laser pulses[J].Acta Optic Sinica,2000,20(10):1297～1304(in Chinese).
[8]	CHNE J K,BERAUN J E,GRIMES L E et al.Modeling of femtosecond laser-induced non-equibrium deformation in metal films[J].International Journal of Solids and Structures,2002,39(12):3199～3216.
[9]	CHICHKOV B N,MOMMA C,NOLTE S et al.Femtosescond,picosecond and nanosecond laser ablation of solids[J].Appl Phys,1996,A63(2):109～115.
[10]	ANISIMOV S I,KAPELIOVICH B L,PERELMAN T L.Electron emission from metal surfaces exposed to ultra-short laser pulses[J].Soviet Physics-Journal of Experimental and Theoretical Physics Letters,1974,39(2):375～377.
[11]	SHEN Z H,LU J,NI X W.Study of the heating mechanism of a Semiconductor irradiated by picosecond and nanosecond laser pulses[J].Chinese Journal of Lasers,1999,26(9):859～863(in Chinese).
[12]	ALLMEN M V.Laser-beam interaction with materials physical principles and applications[M].Berlin:Springer-Verlag,1987.201～207.
[13]	LOU F,JIANG J J,SUN C W.Variation in damage thresholds of Si photodiodes with laser pulse duration[J].High Power Laser and Particle Beams,2004,16(6):685～688(in Chinese).
[14]	ELSAYED-ALI H E,NORRIS T B,PESSOT M A et al.Time-resolved observation of electron-phonon relaxation in copper[J].Phys Rev Lett,1987,58(12):1212～1215.

The thermal analysis of ultrashort laser pulse ablation on semiconductor surface

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Proportional views