Preparation of nano-Si/SiNx film and its application in passive Q-switch of Nd: YAG laser

In order to study passive Q-switch character of the nanoscale-Si-particle embedded in silicon nitride(nano-Si/SiNx)thin film,the film was prepared on single crystal silicon by means of radio frequency magnetron reaction sputtering technique and thermal annealing.In the experiment,these samples were inserted as saturable absorber into the resonator,concave-flat cavity was adopted and Nd:YAG was pumped by a xenon lamp,and the Q-switched waveform of 19ns single pulse width was obtained at repetition rate of 1Hz.Furthermore,the influence of structural characteristic,pump voltage and cavity length on the properties of laser output was investigated.Then,these phenomena observed in the experiment was analyzed and discussed based on the theory of passive Q-switch.In conclusion,nano-Si/SiNx film has potential value in research and applications because of its passive Q-switch character.