Study on photoluminescence characteristic of zinc sulfide/porous Si composites

WANG Cai-feng; LI Qing-shan

In order to study the photoluminescence property of zinc sulfide/porous Si composites,porous Si samples were prepared by electrochemical anodization,and zinc sulfide films were deposited on porous Si substrates by pulsed laser deposition.The photoluminescence spectra were measured.The results showed that,under different excitation wavelengths(340nm,360nm,390nm),the photoluminescence spectra of zinc sulfide/porous Si composites were different,and the relative(blue/red) integrated intensities were also different;When zinc sulfide films were grown at different temperatures(100℃,250℃,350℃),zinc sulfide/porous Si composites also presented different photoluminescence property,with the increase of growth temperature,the luminescence intensity of zinc sulfide increased but the luminescence intensity of porous Si decreased;When porous Si substrates were prepared at different current densities(3mA/cm2,9mA/cm2,11mA/cm2),the optical property of zinc sulfide/porous Si composites was also different.Under proper preparing current density conditions of porous Si,the blue,green emission from zinc sulfide combining with the red emission from porous Si,a broad photoluminescence band(450nm~700nm) in the visible region was obtained,exhibiting intensively white light emission.This offers a cheap route for the realization of white light-emitting diodes.

Corresponding author: LI Qing-shan, qsl@qfnu.edu.cn

1. Department of Physics and Electronic Science, Binzhou Univercity, Binzhou 256603, China;

2. College of Physics and Engineering, Qufu Normal University, Qufu 273165, China;

3. Department of Physics, Ludong University, Yantai 264025, China

Received Date: 2007-01-17

Accepted Date: 2007-03-29

Available Online: 2008-04-25

Abstract: In order to study the photoluminescence property of zinc sulfide/porous Si composites,porous Si samples were prepared by electrochemical anodization,and zinc sulfide films were deposited on porous Si substrates by pulsed laser deposition.The photoluminescence spectra were measured.The results showed that,under different excitation wavelengths(340nm,360nm,390nm),the photoluminescence spectra of zinc sulfide/porous Si composites were different,and the relative(blue/red) integrated intensities were also different;When zinc sulfide films were grown at different temperatures(100℃,250℃,350℃),zinc sulfide/porous Si composites also presented different photoluminescence property,with the increase of growth temperature,the luminescence intensity of zinc sulfide increased but the luminescence intensity of porous Si decreased;When porous Si substrates were prepared at different current densities(3mA/cm2,9mA/cm2,11mA/cm2),the optical property of zinc sulfide/porous Si composites was also different.Under proper preparing current density conditions of porous Si,the blue,green emission from zinc sulfide combining with the red emission from porous Si,a broad photoluminescence band(450nm~700nm) in the visible region was obtained,exhibiting intensively white light emission.This offers a cheap route for the realization of white light-emitting diodes.

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Reference (19)

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Study on photoluminescence characteristic of zinc sulfide/porous Si composites

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