Citation: | WANG Cai-feng, LI Qing-shan. Study on photoluminescence characteristic of zinc sulfide/porous Si composites[J]. LASER TECHNOLOGY, 2008, 32(2): 128-130,179. |
[1] |
NASRALLAH T B,AMLOUK M,BERNEDE J C,et al.Structure and morphology of sprayed ZnS thin films[J].Physics Status Solidi,2004,201(14):3070-3076.
|
[2] |
VELUMANI S,ASCENCIO J A.Formation of ZnS nanorods by simple evaporation technique[J].Appl Phys,2004,A79(1):153-156.
|
[3] |
MCLAUGHLIN M,SAKEEK H F,MAGUIRE P,et al.Properties of ZnS thin films prepared by 248nm pulsed laser deposition[J].A P L,1993,63(14):1865-1867.
|
[4] |
JIU Zh X,ZHANG B L,YAO N.ZnS thin film deposited by pulsed lasers and its luminescent characteristic[J].Laser Technology,2004,28(6):620-624(in Chinese).
|
[5] |
MOROZOVA N K,KARETNIKOV I A,PLOTNICHENKO V G,et al.Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure[J].Semiconductors,2004,38(1):36-41.
|
[6] |
CHEN S Y,ZENG M G,WANG Sh J,et al.Fabrication of the ZnS thin film electroluminescence devices on silicon substrate[J].Journal of Xiamen University(Natural Scicence),2003,42(6):723-726(in Chinese).
|
[7] |
BANDIC Z Z,PIQUETTE E C,MCCALDIN J O,et al.Solid phase recrystallization of ZnS thin films on sapphire[J].A P L,1998,72(22):2862-2864.
|
[8] |
MCCAMY J W,LOWNDES D H,BUDAI J D,et al.Epitaxial ZnS films grown on GaAs(001) and(111) by pulsed-laser ablation[J].J A P,1993,73(11):7818-7822.
|
[9] |
GOKARNA A,PAVASKAR N R,SATHAYE S D,et al.Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon[J].J A P,2002,92(4):2118-2124.
|
[10] |
XING D S,SHI J X,GONG M L,et al.Luminescence modulation of porous silicon-zinc sulfide nanocomposite by in situ synthesis of zinc sulfide[J].Chemical Journal of Chinese Universities,2004,25(1):24-26(in Chinese).
|
[11] |
CANHAM L T.Silicon quantum wire array fabrication by electro-chemical and chemical dissolution of wafers[J].A P L,1990,57(10):1046-1048.
|
[12] |
LIAO L Sh,BAO X M,MIN N B.Two kinds of photoluminescence spectra in porous silicon[J].Journal of Semiconductor,1995,16(2):145-148(in Chinese).
|
[13] |
LIU Y L,LIU Y C,YANG H,et al.The optical properties of ZnO films grown on porous Si templates[J].J Phys,2003,D36(21):2705-2708.
|
[14] |
ZHANG P,KIM P S,SHAM T K.Nanostructured CdS prepared on porous silicon substrate:structure,electronic,and optical properties[J].J A P,2002,91(9):6038-6043.
|
[15] |
XU D Sh,GUO G L,GUI L L.Controlling growth and field emission property of aligned carbon nanotubes on porous silicon[J].A P L,1999,75(4):481-484.
|
[16] |
FAN Sh Sh,CHAPLINE M G.Self-oriented regular arrays of carbon nanotubes and their field emission properties[J].Science,1999,283(5401):512-515.
|
[17] |
GOKARNA A,BHORASKAR S V,PAVASKAR N R,et al.Optoelectronic characterization of porous silicon/CdS and ZnS systems[J].Physics Status Solidi,2000,A182(1):175-179.
|
[18] |
CHEN Q W,ZHU D L,ZHU C.A way to obtain visible blue light emission in porous silicon[J].A P L,2003,82(7):1018-1020.
|
[19] |
PROKES S M,FREITAS J A,Jr,SEARSON P C.Microluminescence depth profiles and annealing effects in porous silicon[J].A P L,1992,60(26):3295-3297.
|
[1] | WANG Mengyao, ZHU Haihong, QI Ting, ZHANG Hu, ZENG Xiaoyan. Selective laser melting Al-Si aluminum alloy and the crack formation mechanism[J]. LASER TECHNOLOGY, 2016, 40(2): 219-222. DOI: 10.7510/jgjs.issn.1001-3806.2016.02.014 |
[2] | MA Zi-xia, LI Qing-shan, ZHANG Li-chun, ZHAO Feng-zhou, QU Chong, HUO Yan-li. Effect of growth time on photoluminescent properties of zinc oxide nanorods[J]. LASER TECHNOLOGY, 2012, 36(4): 501-503. DOI: 10.3969/j.issn.1001-806.2012.04.016 |
[3] | CHEN Jun-ling, DUAN Guo-ping, HUANG Ming-ju. Influence of laser energy on average size of Si nanoparticles deposited in thin film[J]. LASER TECHNOLOGY, 2012, 36(3): 322-325. |
[4] | WANG Cai-feng, LI Qing-shan, HU Bo, LIANG De-chun. Influence of porous silicon porosity on optoelectronic property of ZnS/porous silicon[J]. LASER TECHNOLOGY, 2010, 34(6): 766-769. DOI: 10.3969/j.issn.1001-3806.2010.06.013 |
[5] | YAN Ming-bao, ZHOU Ping, WANG Hai-long. Numerical analysis of transmission properties of SiO2/Si photonic crystal[J]. LASER TECHNOLOGY, 2009, 33(1): 50-52,70. |
[6] | CHE Yong-li, CAO Xiao-long, LI Qing-shan. Preparation and photoluminescence of nano-porous oxidized silicon[J]. LASER TECHNOLOGY, 2008, 32(6): 605-607. |
[7] | GUO Heng-qun, WANG Jia-xian, LI Li-wei, SHEN Ji-wei, . Preparation of nano-Si/SiNx film and its application in passive Q-switch of Nd: YAG laser[J]. LASER TECHNOLOGY, 2008, 32(2): 163-165,170. |
[8] | YANG Ya-jun, LI Qing-shan, LIU Xian-yun. Study on properties of electroluminescence from porous silicon heterojunction device[J]. LASER TECHNOLOGY, 2007, 31(2): 166-168. |
[9] | Lou Qihong, Zhang Lin, Ye Zhenhuan, Dong Jingxing, Wei Yunrong. Experimental research on Si cutting by using UV excimer laser[J]. LASER TECHNOLOGY, 2002, 26(4): 250-251,254. |
[10] | Song Dengyuan, Guo Baozeng, Li Baotong. Properties of Ar+ laser induced wet etching into Si[J]. LASER TECHNOLOGY, 1999, 23(3): 190-193. |