Analysis of photon localization property in 1-D photonic crystal micro-cavity

ZHONG Yuan-cong; OUYANG Zheng-biao; WANG Hong; WANG Zhong-chun; LIU Zong-ping; WU Zhi-rong

LASER TECHNOLOGY > 2009 > 33(2): 127-129,133.

ZHONG Yuan-cong, OUYANG Zheng-biao, WANG Hong, WANG Zhong-chun, LIU Zong-ping, WU Zhi-rong. Analysis of photon localization property in 1-D photonic crystal micro-cavity[J]. LASER TECHNOLOGY, 2009, 33(2): 127-129,133.

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Analysis of photon localization property in 1-D photonic crystal micro-cavity

1.
Shenzhen Key Laboratory of Photonic Information Technology, Research Center of THz Technology, College of Electronic Science and Technology, Shenzhen Unirersity, Shenzhen 518060, China;
2.
Department of Electronic Engineering, YuanZe University, Taoyuan 320, China

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Received Date: January 16, 2008
Revised Date: February 18, 2008
Published Date: April 24, 2009

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Abstract

In order to study the photon localization property of photonic crystal, the localized field distribution of defect modes was computed by means of the optical transmission matrix method.The concept of relative localization length was introduced, which represents the degree of the localization of photons.The shorter the length, the more stronger the degree, and vice versa.The results show that the localization of photons in the structure with a defect layer bordering on high refractive index layers is stronger than that bordering on low refractive index layers.For the former structure, if the condition of resonance Bragg scattering or Mie scattering was satisfied, the relative localization length become smaller.
- integrated optics,
- photonic crystal micro-cavity,
- photonic localization,
- relative localization length

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