Citation: | CHE Yong-li, CAO Xiao-long, LI Qing-shan. Preparation and photoluminescence of nano-porous oxidized silicon[J]. LASER TECHNOLOGY, 2008, 32(6): 605-607. |
[1] |
BALUCANIA M,BONDARENKOB V,VOROZOVB N,et al.Technological aspects of oxidated porous silicon waveguides[J].Physica,2003,E16(3/4):586-590.
|
[2] |
PEREZ R,CHAILLET N,DOMANSKI K,et al.Fabrication,modeling and integration of a silicon technology force sensor in a piezoelectric micro-manipulator[J].Sensors and Actuators,2006,A128(2):367-375.
|
[3] |
NGUYEN T P,le RENDU P,LAKEHAL M,et al.Filling porous silicon pores with poly (p phenylene vinylene)[J].Physica Status Solidi,2003,A197(1):232-235.
|
[4] |
GUENDOUZ M,PEDRONO N,ETESSE R,et al.Oxidised and non oxidized porous/disperse red1 composite:physical and optical properties[J].Physica Status Solidi,2003,A197(2):414-418.
|
[5] |
JAIN A,ROGOJEVIC S,PONOTH S,et al.Porous silica materials as low-k dielectrics for electronic and optical interconnects[J].Thin Solid Films,2001,398/399:513-522.
|
[6] |
KUMAGAI A,ISHIBASHI K,GE X M,et al.High-quality SiO2 film deposition using active reaction by oxygen radical[J].Vacuum,2002,66(3):317-322.
|
[7] |
CHRYSICOPOULOU P,DABAZOGLOU D,TRAPALIS C,et al.Optical properties of SiO2-TiO2 sol-gel thin films[J].Journal of Materials Science,2004,39(8):2835-2839.
|
[8] |
SONG Q,SONG Ch L,GAO J Sh,et al.Yb3+/Er3+ co-doped Al2O3 optical waveguide fabricated by middle frequency sputter[J].Laser Technology,2005,29(4):440-442(in Chinese).
|
[9] |
KORDAS K,REMES J,BEKE S,et al.Manufacturing of porous silicon:porosity and thickness dependence on electrolyte composition[J].Applied Surface Science,2001,178(1/4):190-193.
|
[10] |
YANG Y J,LI Q Sh,LIU X Y.Study on properties of electrolumines-cence from porous silicon hetero junction device[J].Laser Technology,2007,31(2):166-168(in Chinese).
|
[11] |
COOKE D W,MUENCHAUSED R E,BENNETT B L,et al.Quantum confinement contribution to porous silicon photoluminescence spectra[J].J A P,2004,96(1):197-202.
|
[12] |
TSAI C,LI K H,KINOSKY D S,et al.Correlation between silicon hydride species and the photoluminescence intensity of porous silicon[J].A P L,1992,60(14):1700-1702.
|
[13] |
PROKES S M,GLEMBOKI O J,BERMUDEZ V M,et al.SiHx excitation:an alternate mechanism for porous Si photoluminescence[J].Physical Review,1992,B45(23):13788-13791.
|
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