Niu Yanxiong. Generation of the ultrashort,high-voltage and high-power electrical pulse using a photoconductive switch[J]. LASER TECHNOLOGY, 1995, 19(3): 146-149.
Citation:
Niu Yanxiong. Generation of the ultrashort,high-voltage and high-power electrical pulse using a photoconductive switch[J]. LASER TECHNOLOGY, 1995, 19(3): 146-149.
Niu Yanxiong. Generation of the ultrashort,high-voltage and high-power electrical pulse using a photoconductive switch[J]. LASER TECHNOLOGY, 1995, 19(3): 146-149.
Citation:
Niu Yanxiong. Generation of the ultrashort,high-voltage and high-power electrical pulse using a photoconductive switch[J]. LASER TECHNOLOGY, 1995, 19(3): 146-149.
Based on the photoconductive effect of the semiconductor,the photo-conductive switch has been developed.The photoconductive switch is biased at 4kV bias voltage,and can generate a electrical pulse in 50 ohm load with peak voltage~1.8kV,peak power~65kW and 16ns duration,when the switch is triggered by a laser pulse with 12 ns pulsewidth.In this paper,the keytechnologies of the photoconductive switch,such as dark resistance. carrier life、constant resistance etc,are described.