Citation: | CHEN Gui-bin. Uniformity test of the local optical thickness for GaN-based material[J]. LASER TECHNOLOGY, 2006, 30(3): 301-303. |
[1] |
LESTER S D,PONCE F A,CRAFORD M G et al.High dislocation densities in high efficiency GaN-based light-emitting diodes[J].A P L,1995,66(10):1249~1251.
|
[1] |
NAKAMURA S,SENOH M,NAGAHAMA S et al.Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes[J].A P L,1996,69(11):1568~1570.
|
[2] |
LANG J H,GU B,XU Y et al.The GaN-based semiconductor materials LDs[J].Laser Technology,2003,27(4):321~324(in Chin-ese).
|
[3] |
NAKAMURA S,MUKAI T.High-quality InGaN films grown on GaN films[J].Japan J A P,1992,31(10B):L1457~L1459.
|
[4] |
LI Z L,HU X D,ZHANG B et al.Thin film GaN-based membranes by laser lift-off and cleaved InGaN LD facet[J].Laser Technology,2004,28(1):29~32(in Chinese).
|
[5] |
LI Z Q,CHEN H,LIU H F et al.Photoluminescence study of Si doping cubic GaN grown on (001) GaAs substrates by MBE[J].J Crystal Growth,2001,227~228:420~424.
|
[6] |
RESHCHIKOV M A,HUANG D,YUN F et al.Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template[J].A P L,2001,79(23):3779~3781.
|
[7] |
CHEN G B,LU W,MIAO Z L et al.Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy[J].Acta Physica Sinica,2002,51(3):659~662(in Chinese).
|
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