Uniformity test of the local optical thickness for GaN-based material
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1.
Jiangsu Key Laboratory for Chemistry of Low Dimensional Material, Department of Physics, Huaiyin Teachers College, Huaiyin 223001, China;
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2.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, the Chinese Academy of Sc
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Corresponding author:
CHEN Gui-bin, gbchen@mai.lsitp.ac.cn
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Received Date:
2005-02-28
Accepted Date:
2005-10-24
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Abstract
Based on the interference signal in the micro-photoluminescence(μ-PL) spectra,a practical method of getting local optical thickness for GaN-based material is presented.By means of analyzing the sequence energy of interference peaks,the optical thickness of the GaN-based films can be determined.The non-uniformity of the fitted parameter can correspondingly show that of the optical thickness.This can give the important information for optimizing the material growth technique.
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Proportional views
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