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JIN Chun-lai, HU Xiao-dong, WANG Qi, ZHANG Zhen-sheng, ZHANG Bei. Measurement of optical gain and optical internal loss in GaN-based laser[J]. LASER TECHNOLOGY, 2005, 29(3): 284-286.
Citation: JIN Chun-lai, HU Xiao-dong, WANG Qi, ZHANG Zhen-sheng, ZHANG Bei. Measurement of optical gain and optical internal loss in GaN-based laser[J]. LASER TECHNOLOGY, 2005, 29(3): 284-286.

Measurement of optical gain and optical internal loss in GaN-based laser

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  • Received Date: May 07, 2004
  • Revised Date: May 31, 2004
  • Published Date: May 24, 2005
  • To assess the performance of a semiconductor laser,knowledge of gain and loss at a known pumping level is essential.Both the gain and the loss coefficients were obtained through analyzing amplified spontaneous emission (ASE) measured with variable stripe length (VSL) method,and serious gain saturation phenomenon was observed in the process.The results confirm the feasibility of the VSL method in studying the performance of GaNLD samples.Performance of LDs with two different structures in gain and gain saturation were compared through VSL method,and the reason that leads to the differen ce was discussed.
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    THOMSON J D,SUMMERS H D,HULYER P J et al.Determination of single-pass optical gain and internal loss using a multisection device [J].A P L,1999,75(17):2527~2529.
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    KIMURA Y,ITO A,MIYACHI M et al.Optical gain and optical internal loss of GaN-based laser diodes measured by variable stripe length method with laser processing [J].Japan J A P,2001,40:L1103~L1106.

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