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Volume 29 Issue 3
Sep.  2013
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Article Navigation >  LASER TECHNOLOGY  > 2005 >  29(3): 284-286

Citation:
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Measurement of optical gain and optical internal loss in GaN-based laser

  • 1.

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China;

  • 2.

    Research Center for Wide Gap Semiconductors, Peking University, Beijing 100871, China

  • Corresponding author: HU Xiao-dong, huxd@pku.edu.cn ; 
  • Received Date: 2004-05-08
    Accepted Date: 2004-06-01
  • To assess the performance of a semiconductor laser,knowledge of gain and loss at a known pumping level is essential.Both the gain and the loss coefficients were obtained through analyzing amplified spontaneous emission (ASE) measured with variable stripe length (VSL) method,and serious gain saturation phenomenon was observed in the process.The results confirm the feasibility of the VSL method in studying the performance of GaNLD samples.Performance of LDs with two different structures in gain and gain saturation were compared through VSL method,and the reason that leads to the differen ce was discussed.
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  • [1]

    OSTER A,ERBERT G,WENZEL H.Gain spectra measurements by a variable stripe length method with current injection [J].Electron Lett,1997,33(10):864～866.
    [2]

    THOMSON J D,SUMMERS H D,HULYER P J et al.Determination of single-pass optical gain and internal loss using a multisection device [J].A P L,1999,75(17):2527～2529.
    [3]

    KIMURA Y,ITO A,MIYACHI M et al.Optical gain and optical internal loss of GaN-based laser diodes measured by variable stripe length method with laser processing [J].Japan J A P,2001,40:L1103～L1106.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Measurement of optical gain and optical internal loss in GaN-based laser

    Corresponding author: HU Xiao-dong, huxd@pku.edu.cn; 
  • 1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China;
  • 2. Research Center for Wide Gap Semiconductors, Peking University, Beijing 100871, China
  • Received Date: 2004-05-08
  • Accepted Date: 2004-06-01
  • Available Online: 2005-05-25

Abstract: To assess the performance of a semiconductor laser,knowledge of gain and loss at a known pumping level is essential.Both the gain and the loss coefficients were obtained through analyzing amplified spontaneous emission (ASE) measured with variable stripe length (VSL) method,and serious gain saturation phenomenon was observed in the process.The results confirm the feasibility of the VSL method in studying the performance of GaNLD samples.Performance of LDs with two different structures in gain and gain saturation were compared through VSL method,and the reason that leads to the differen ce was discussed.

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