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CHENG Yuan-li, LI Si-ning, WANG Qi. Extreme ultraviolet source of microlithography based on laser induced plasma and discharge induced plasma[J]. LASER TECHNOLOGY, 2004, 28(6): 561-564.
Citation: CHENG Yuan-li, LI Si-ning, WANG Qi. Extreme ultraviolet source of microlithography based on laser induced plasma and discharge induced plasma[J]. LASER TECHNOLOGY, 2004, 28(6): 561-564.
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Extreme ultraviolet source of microlithography based on laser induced plasma and discharge induced plasma

  • National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

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  • Received Date: February 15, 2004
  • Revised Date: May 19, 2004
  • Published Date: November 24, 2004
    Graphical Abstract
    • Abstract
  • The present status of extreme ultraviolet(EUV) source based on laser induced plasma(LIP) and discharge induced plasma(DIP) is reviewed.The characteristics and the progresses of LIP and DIP are compared.In general, discharge induced pinch plasma is of special interest,for its cost is expected to be much lower than that of LIP.
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    • References (5)
  • [1]
    NEFF W,BERGMANN K,ROSIER O et al.Pinch plasma radiation sources for the extreme ultraviolet[J].Contrib Plasma Phys,2001,41(6):589～594.
    [2]
    MILLS R,RAY P.Extreme ultraviolet spectroscopy of helium-hydrogen plasma[J].J Phys,2003,D36:1535～1542.
    [3]
    LEBERT R,ASCHKE L,BERGMAN K et al.Preliminary results from key experiments on sources for EUV lithography[J].Microelectronic Engineering,2001,57:87～92.
    [4]
    YBANINE V,BENSCHOP J P H,WERIJ H G C.Comparison of extreme ultraviolet sources for lithography applications[J].Microelectronic Engineering,2001,53:681～684.
    [5]
    BOBOC T,BISCHOFF R,LANGHOFF H.Emission in the extreme ultraviolet by xenon excited in a capillary discharge[J].J Phys,2003,D34:2512～2517.
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