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KANG Jun-jian, ZHANG Shi-ying, SU Mei-kai, WANG Da-cheng. Development for semiconductor laser accelerating lifetime testing system[J]. LASER TECHNOLOGY, 2004, 28(3): 228-230,254.
Citation: KANG Jun-jian, ZHANG Shi-ying, SU Mei-kai, WANG Da-cheng. Development for semiconductor laser accelerating lifetime testing system[J]. LASER TECHNOLOGY, 2004, 28(3): 228-230,254.
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Development for semiconductor laser accelerating lifetime testing system

  • 1.

    Institute of Opto-electronic, Shijiazhuang University of Economics, Shijiazhuang 050031, China;

  • 2.

    Department of Communication, Xi'an Engineering College of Armed Police Force, Xi'an 710086, China;

  • 3.

    Department of Opto-electronic Engineering, Beijing Institute of Technology, Beijing 100081, China;

  • 4.

    Institute of Waterborne Transportation, Ministry of Communications, Beijing 100088, China

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  • Received Date: December 01, 2002
  • Revised Date: November 15, 2003
  • Published Date: May 24, 2004
    Graphical Abstract
    • Abstract
  • This paper introduces the theory of laser diode(LD)accelerating lifetime testing and mathematic model of life testing,based on wihich a new type of LDs burn-in & automatic life testing system was developed.It continuously samples the power of LDs which works under automatic current control and under the airproof condition filled with nitrogen at testing temperature,plots power-time curve of LD and deduces the working life of LD.
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    • References (11)
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