A narrow linewidth external-cavity semiconductor laser

JIANG Peng-fei; ZHAO Wei-rui; ZHANG Jing-juan; XIE Fu-zeng

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LASER TECHNOLOGY > 2004 > 28(2): 160-161.

JIANG Peng-fei, ZHAO Wei-rui, ZHANG Jing-juan, XIE Fu-zeng. A narrow linewidth external-cavity semiconductor laser[J]. LASER TECHNOLOGY, 2004, 28(2): 160-161.

Citation:

JIANG Peng-fei, ZHAO Wei-rui, ZHANG Jing-juan, XIE Fu-zeng. A narrow linewidth external-cavity semiconductor laser[J]. LASER TECHNOLOGY, 2004, 28(2): 160-161.

Citation:

JIANG Peng-fei, ZHAO Wei-rui, ZHANG Jing-juan, XIE Fu-zeng. A narrow linewidth external-cavity semiconductor laser[J]. LASER TECHNOLOGY, 2004, 28(2): 160-161.

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A narrow linewidth external-cavity semiconductor laser

1.
Graduate School, the Chinese Academy of Sciences, Beijing 100039, China;
2.
Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, China

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Received Date: May 23, 2003
Revised Date: June 26, 2003
Published Date: March 24, 2004

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Abstract

Abstract

We introduce the external-cavity semiconductor laser with feedback of Littrow configuration. The spectral line width is narrowed to be less than 1.2MHz and the output stability is remarkably enhanced. We also propose a new complex-cavity method which can greatly narrow the line width of a semiconductor laser.
- external-cavity semiconductor laser,
- narrow bandwidth,
- light feedback,
- complexed-cavity

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References

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A narrow linewidth external-cavity semiconductor laser

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