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Volume 28 Issue 2
Sep.  2013
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Article Navigation >  LASER TECHNOLOGY  > 2004 >  28(2): 160-161

Citation:
shu

A narrow linewidth external-cavity semiconductor laser

  • 1.

    Graduate School, the Chinese Academy of Sciences, Beijing 100039, China;

  • 2.

    Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, China

  • Received Date: 2003-05-24
    Accepted Date: 2003-06-27
  • We introduce the external-cavity semiconductor laser with feedback of Littrow configuration. The spectral line width is narrowed to be less than 1.2MHz and the output stability is remarkably enhanced. We also propose a new complex-cavity method which can greatly narrow the line width of a semiconductor laser.
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    NOTOMI M,MITONMI O,YOSHIKUNI Y.IEEE Photon Technol Lett,1990(2):85～87.
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    HARVER K C,MYATT C J.Opt Lett,1991,16(12):910～912.
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    HJELME D R.IEEE J Q E, 1987,QE23(6):1000～1004.
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    BOSHIER M G,BERKELAND D,HINDS E A et al.Opt Commun,1991,85:355～359.
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    de LABACHELERIE M,PASSEDAT G.Appl Opt,1993,32(3):269～274.
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通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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A narrow linewidth external-cavity semiconductor laser

  • 1. Graduate School, the Chinese Academy of Sciences, Beijing 100039, China;
  • 2. Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, China
  • Received Date: 2003-05-24
  • Accepted Date: 2003-06-27
  • Available Online: 2004-03-25

Abstract: We introduce the external-cavity semiconductor laser with feedback of Littrow configuration. The spectral line width is narrowed to be less than 1.2MHz and the output stability is remarkably enhanced. We also propose a new complex-cavity method which can greatly narrow the line width of a semiconductor laser.

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