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WEI Ren-xuan. Relationship between etching identities and laser pulse parameters in excimer laser direct etching fabrication[J]. LASER TECHNOLOGY, 2004, 28(1): 85-87.
Citation: WEI Ren-xuan. Relationship between etching identities and laser pulse parameters in excimer laser direct etching fabrication[J]. LASER TECHNOLOGY, 2004, 28(1): 85-87.

Relationship between etching identities and laser pulse parameters in excimer laser direct etching fabrication

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  • Received Date: March 27, 2003
  • Revised Date: June 17, 2003
  • Published Date: January 24, 2004
  • KrF excimer laser, whose wavelength is 248nm, is directly used to ablate and etch glass material;the location of processed material is accurately controlled by a micro motion controlling system. The relationships between laser pulse parameters, the number and energy and characteristics of yielded grooves are investigated. It is shown that the ablation depth of a single laser pulse becomes smaller and smaller along with the increasing of laser pulse amount. Furthermore, the depth of the yielded grooves becomes constant when the laser pulses add up to a definite number. The more the energy of laser pulse the more the etching speed is. There is an upper limit for the etching speed.
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