The GaN-based semiconductor materials LDs

Lang Jia-hong; Gu Biao; Xu Yin; Qin Fu-wen

LASER TECHNOLOGY > 2003 > 27(4): 321-324,327.

Lang Jia-hong, Gu Biao, Xu Yin, Qin Fu-wen. The GaN-based semiconductor materials LDs[J]. LASER TECHNOLOGY, 2003, 27(4): 321-324,327.

Citation:

Lang Jia-hong, Gu Biao, Xu Yin, Qin Fu-wen. The GaN-based semiconductor materials LDs[J]. LASER TECHNOLOGY, 2003, 27(4): 321-324,327.

Citation:

Lang Jia-hong, Gu Biao, Xu Yin, Qin Fu-wen. The GaN-based semiconductor materials LDs[J]. LASER TECHNOLOGY, 2003, 27(4): 321-324,327.

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The GaN-based semiconductor materials LDs

Lang Jia-hong^1,2,
Gu Biao^1,2,
Xu Yin^1,2,
Qin Fu-wen^1,2

1.
National Key Laboratory of Material Modification by 3-Beams, Dalian University of Technology, Dalian, 116024;
2.
Department of Electrical Engineering and Applied Electronic Technology, Dalian University of Technology, Dalian, 116024

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Received Date: November 25, 2002
Revised Date: March 02, 2003
Published Date: July 24, 2003

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Abstract

Abstract

The development of semiconductor LDs materials and a few technical progresses for GaN-based semiconductor materials are reviewed.The development course of GaN-based LDs is also described in the paper.
- GaN,
- semiconductor LDs,
- MOCVD,
- epitaxy growth

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References

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