The GaN-based semiconductor materials LDs

Lang Jia-hong; Gu Biao; Xu Yin; Qin Fu-wen

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Volume 27 Issue 4

Dec. 2013

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Article Navigation > LASER TECHNOLOGY > 2003 > 27(4): 321-324,327

Citation:

The GaN-based semiconductor materials LDs

1.
National Key Laboratory of Material Modification by 3-Beams, Dalian University of Technology, Dalian, 116024;
2.
Department of Electrical Engineering and Applied Electronic Technology, Dalian University of Technology, Dalian, 116024

Received Date: 2002-11-26
Accepted Date: 2003-03-03

Abstract

The development of semiconductor LDs materials and a few technical progresses for GaN-based semiconductor materials are reviewed.The development course of GaN-based LDs is also described in the paper.
- GaN,
- semiconductor LDs,
- MOCVD,
- epitaxy growth

References

[1]	Nishimae J,Yoshizawa K.SPIE,1990,1225:340～348.
[2]	Klingenberg H H,Gebat F.Appl Phys,1992,B54:205～207.
[3]	Lin M E,Ma Z,Huang F Y et al.A P L,1994,64:1003.
[4]	Nakamura S,Senoh M,Nagahama S et al.Japan J A P,1996,35:74.
[5]	Nakamura S,Senoh M,Nagahama S et al.A P L,1996,69:3034.
[6]	Nakamura S.J Crystal Growth,1998,195:242～247.
[7]	Nakamura S.Materials Science and Engineering,1999,B59:370～375.
[8]	Mukai T,Nagahama S,Iwasaw N et al.In:Proc.China-Japan Workshop on Nitride Semiconductor Materials and Devices,Shanghai,2001:96.
[9]	Nakamura S,Senoh M,Nagahama S et al.A P L,1996,69:1477.
[10]	Nakamura S,Senoh M,Nagahama S et al.A P L,1996,69:4056.
[11]	Nakamara S,Senoh M,Nagahama S et al.A P L,1997,70:1417.
[12]	Nakamara S,Senoh M,Nagahama S et al.Japan J A P,1997,36:1059.
[13]	Nakamura S,Senoh M,Nagahama S et al.A P L,1998,72:211.
[14]	Nakamura S,Senoh M,Nagahama S et al.Japan J A P,1997,36:1568.

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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The GaN-based semiconductor materials LDs

1. National Key Laboratory of Material Modification by 3-Beams, Dalian University of Technology, Dalian, 116024;
2. Department of Electrical Engineering and Applied Electronic Technology, Dalian University of Technology, Dalian, 116024

Received Date: 2002-11-26
Accepted Date: 2003-03-03
Available Online: 2003-07-25

Abstract: The development of semiconductor LDs materials and a few technical progresses for GaN-based semiconductor materials are reviewed.The development course of GaN-based LDs is also described in the paper.

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Reference (14)

[1]	Nishimae J,Yoshizawa K.SPIE,1990,1225:340～348.
[2]	Klingenberg H H,Gebat F.Appl Phys,1992,B54:205～207.
[3]	Lin M E,Ma Z,Huang F Y et al.A P L,1994,64:1003.
[4]	Nakamura S,Senoh M,Nagahama S et al.Japan J A P,1996,35:74.
[5]	Nakamura S,Senoh M,Nagahama S et al.A P L,1996,69:3034.
[6]	Nakamura S.J Crystal Growth,1998,195:242～247.
[7]	Nakamura S.Materials Science and Engineering,1999,B59:370～375.
[8]	Mukai T,Nagahama S,Iwasaw N et al.In:Proc.China-Japan Workshop on Nitride Semiconductor Materials and Devices,Shanghai,2001:96.
[9]	Nakamura S,Senoh M,Nagahama S et al.A P L,1996,69:1477.
[10]	Nakamura S,Senoh M,Nagahama S et al.A P L,1996,69:4056.
[11]	Nakamara S,Senoh M,Nagahama S et al.A P L,1997,70:1417.
[12]	Nakamara S,Senoh M,Nagahama S et al.Japan J A P,1997,36:1059.
[13]	Nakamura S,Senoh M,Nagahama S et al.A P L,1998,72:211.
[14]	Nakamura S,Senoh M,Nagahama S et al.Japan J A P,1997,36:1568.

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