Innovation for preparation condition and electron irradiation for phase transition properties and TCR in VO2 thin film
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Department of Physics, Sichuan University, Irradiation Physics and Technology Key Laboratory of National Education Department, Chengdu, 610064
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Received Date:
2000-11-01
Accepted Date:
2000-12-11
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Abstract
VO2 thin films are prepared under different conditions and irradiated by electron beam with fluence of 1013/cm2～1017/cm2.The phase transition properties and temperature coefficient of resistance are measured with or without electron irradiation.The results show that different preparation conditions and electron irradiation can change the phase transition properties and TCR in VO2 thin films.Other factors that affect the electrical properties and TCR in VO2 thin films have also been discussed.
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