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Volume 26 Issue 1
Sep.  2013
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Citation:
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Effect of distortion of mask on photolithography pattern quality

  • 1.

    Department of Physics, Sichuan University, Chengdu, 610064;

  • 2.

    Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OXON, OX11 0QX, U. K.

  • Received Date: 2000-09-22
  • Following the difference of double Gaussian function describing the proximity effects in laser direct writing,the distortion of the mask and its influence on projection lithography pattern quality are simulated.The results show that the area deviation of the mask fabricated by laser writer is about 5% and make the projection lithography quality worse.
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  • [1]

    Langlois P.SPIE,1992,1751:2～12.
    [2] Guo L R,Guo Y K.光子学报,1994,23(Z2):43～52.
    [3]

    Du J L,Gao F H Opt Engng,2000,39(3):771～775.
    [4] Du J L,Su J Q,Luo K J et al.光学学报,2000,20(4):518～524.
    [5]

    Maurer W,Dolainsky C,Thiele J et al.SPIE,1998,3334:245～253.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Effect of distortion of mask on photolithography pattern quality

  • 1. Department of Physics, Sichuan University, Chengdu, 610064;
  • 2. Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OXON, OX11 0QX, U. K.
  • Received Date: 2000-09-22
  • Available Online: 2002-01-25

Abstract: Following the difference of double Gaussian function describing the proximity effects in laser direct writing,the distortion of the mask and its influence on projection lithography pattern quality are simulated.The results show that the area deviation of the mask fabricated by laser writer is about 5% and make the projection lithography quality worse.

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