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Volume 25 Issue 3
Sep.  2013
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Citation:

Analysis of modulation characteristics and transient response of semiconductor micro-cavity lasers

  • Received Date: 1999-12-02
    Accepted Date: 2000-03-09
  • Based on the structural property of semiconductor and the enhanced effect of spontaneous emission in cavity quantum electron dynamics,a simple rate equation is derived for micro-cavity lasers.Transient response and dynamic modulation characteristics of micro-cavity lasers are discussed.The dependence of threshold,turn on delay and relaxation oscillation frequency on spontaneous emission factor,inject current and the length of the cavity is analyzed.The results construct the theoretical basis to improve the high frequency modulation characteristics of micro-cavity lasers and to optimize their structures.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Analysis of modulation characteristics and transient response of semiconductor micro-cavity lasers

  • 1. Department of Computer and Communication Engineering Southwest Jiaotong University, Chengdu, 610031;
  • 2. Department of Opto electronics, Sichuan University, Chengdu, 610064

Abstract: Based on the structural property of semiconductor and the enhanced effect of spontaneous emission in cavity quantum electron dynamics,a simple rate equation is derived for micro-cavity lasers.Transient response and dynamic modulation characteristics of micro-cavity lasers are discussed.The dependence of threshold,turn on delay and relaxation oscillation frequency on spontaneous emission factor,inject current and the length of the cavity is analyzed.The results construct the theoretical basis to improve the high frequency modulation characteristics of micro-cavity lasers and to optimize their structures.

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