Analysis of modulation characteristics and transient response of semiconductor micro-cavity lasers

Based on the structural property of semiconductor and the enhanced effect of spontaneous emission in cavity quantum electron dynamics,a simple rate equation is derived for micro-cavity lasers.Transient response and dynamic modulation characteristics of micro-cavity lasers are discussed.The dependence of threshold,turn on delay and relaxation oscillation frequency on spontaneous emission factor,inject current and the length of the cavity is analyzed.The results construct the theoretical basis to improve the high frequency modulation characteristics of micro-cavity lasers and to optimize their structures.