Analysis of the output spectrum of three-section
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1.
Southwest Institute of Technical Physics, Chengdu, 610041;
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2.
Department of Opto electronics, Sichuan University, Chengdu, 610064
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Received Date:
2000-03-10
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Abstract
Micro machined defects can be introduced into a semiconductor laser to improve spectral characteristics of the F-P laser.Based on ray trace method, an expression of the output spectrum from a micro machined F-P semiconductor laser including two defects has been deduced.With the aid of the expression,the difference ΔN between the nominal threshold carrier density Nth and actual carrier density N of the laser can be determined, and the side mode suppression can be specified.
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