Intensity asymmetry of facet output mode spectrum of a semiconductor laser biased below threshold

Wu Zhengmao; Xia Guangqiong; Chen Jianguo

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LASER TECHNOLOGY > 1996 > 20(4): 202-205.

Wu Zhengmao, Xia Guangqiong, Chen Jianguo. Intensity asymmetry of facet output mode spectrum of a semiconductor laser biased below threshold[J]. LASER TECHNOLOGY, 1996, 20(4): 202-205.

Citation:

Wu Zhengmao, Xia Guangqiong, Chen Jianguo. Intensity asymmetry of facet output mode spectrum of a semiconductor laser biased below threshold[J]. LASER TECHNOLOGY, 1996, 20(4): 202-205.

Citation:

Wu Zhengmao, Xia Guangqiong, Chen Jianguo. Intensity asymmetry of facet output mode spectrum of a semiconductor laser biased below threshold[J]. LASER TECHNOLOGY, 1996, 20(4): 202-205.

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Intensity asymmetry of facet output mode spectrum of a semiconductor laser biased below threshold

1.
Dept.of Phys., South-west Normal Univ.;
2.
Dept. of Opto-Electronic Science & Technology, Sichuan Univ.

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Received Date: March 27, 1995
Published Date: July 24, 1996

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Abstract

Abstract

Starting from the multimode rate equations and concerning the fact of wavelength diffe rence of the spontaneous emission peak and gain peak,the intensity asymmetry of the longitudinal mode spectrum of the semiconductor laser biased below threshold is studied.The results indicate that the reason of the asymmetry is from the shorter peak wavelength of the spontaneous radiation than the gain peak wavelength.The experiment confirmed the theoretical prediction.
- semiconductor laser,
- output mode spectrum,
- asymmetry

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References

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