Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers

Cao Sansong. Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers[J]. LASER TECHNOLOGY, 1996, 20(3): 177-181.

Citation:

Cao Sansong. Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers[J]. LASER TECHNOLOGY, 1996, 20(3): 177-181.

Citation:

Cao Sansong. Single-mode ridge-waveguide A1GaAs/GaAs quantum well lasers[J]. LASER TECHNOLOGY, 1996, 20(3): 177-181.

Abstract

Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers with graded-index separate confinement heterostructure were fabricated by molecular beam epitaxy. Fabricated dirge lasers exhibited excellent lasing characteristics including a low threshold current of 23mA(CW,25℃,5μm stripe). Continuous-wave laser output increases linearly with the drive current up to 15mW in single-mode operation.