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Volume 18 Issue 4
Sep.  2013
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Research on growth rate uniformity in horizontal MOCVD systems

  • Received Date: 1993-05-08
    Accepted Date: 1993-06-14
  • This paper discusses the main factor of affecting growth rate in MOCVD system,such as the flow rate of carriers gas and organometallic source, position of substrate,doping and undoping, etc.The experimental results are discussed and comparedwith other literatures.The lateral uniformity problem has been emphasizes.
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  • [1]

    Vandeven J, Rutten G M J. Raaijmakers M J. J Crystal Growth.1986;176,352
    [2]

    Ouazzani J. Chiu K C. Rosenherger F. J Crystal Growth. 1988,91,497
    [3]

    Ouazzani J. Rosenherger F. J Crystal Growth, 1990;100;545
    [4]

    Lee P, McKenna D. Kapur D. J Crystal Growth, 1986177,120
    [5]

    Stock L, Richter W. J Crystal Growth. 1986:77,144
    [6]

    Matsumoto K. Itoh K, Tahuchi T et al.J Crystal Growth. 1986:77,151
    [7]

    lkeda M. Kojima S, Kashiwayanagi Y. J Crystal Growths 1986;77,157
    [8]

    Landgren G. Andersson S G. Andersson J Y. J Crystal Growth. 1986;77,67
    [9]

    Soga T, Takahshi Y, Sakai S et al. J Crystal Growth. 1984;68;169
    [10]

    Woffat H. Jensen K. J Crystal Growth, 1986:77,108
    [11]

    Evans G H, Greif R. Computational mechanics division sandia national laboratories. CA94550 SAND86-8843, Liver-more;JUly, 1986
    [12]

    Fotiadis D I. Boekholt M. Jensen K F. J Crystal Growth. 1990,100,577
    [13]

    Fotiadis D I, Kieda S. J Crystal Growth,1990;102:441
    [14]

    Jensen K F. J Crystal Growth. 1991;107:1
    [15]

    Holmes D E. Chem Engng Sci. 1986:23,717
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Research on growth rate uniformity in horizontal MOCVD systems

  • 1. Changchun College of Optics and Fine Mechanics

Abstract: This paper discusses the main factor of affecting growth rate in MOCVD system,such as the flow rate of carriers gas and organometallic source, position of substrate,doping and undoping, etc.The experimental results are discussed and comparedwith other literatures.The lateral uniformity problem has been emphasizes.

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