Liu Guojun, Xu Li, Shi Quanlin, Wang Xixiang, Zhang Qianyong. Research on growth rate uniformity in horizontal MOCVD systems[J]. LASER TECHNOLOGY, 1994, 18(4): 220-224.
Citation:
Liu Guojun, Xu Li, Shi Quanlin, Wang Xixiang, Zhang Qianyong. Research on growth rate uniformity in horizontal MOCVD systems[J]. LASER TECHNOLOGY, 1994, 18(4): 220-224.
Liu Guojun, Xu Li, Shi Quanlin, Wang Xixiang, Zhang Qianyong. Research on growth rate uniformity in horizontal MOCVD systems[J]. LASER TECHNOLOGY, 1994, 18(4): 220-224.
Citation:
Liu Guojun, Xu Li, Shi Quanlin, Wang Xixiang, Zhang Qianyong. Research on growth rate uniformity in horizontal MOCVD systems[J]. LASER TECHNOLOGY, 1994, 18(4): 220-224.
Research on growth rate uniformity in horizontal MOCVD systems
This paper discusses the main factor of affecting growth rate in MOCVD system,such as the flow rate of carriers gas and organometallic source, position of substrate,doping and undoping, etc.The experimental results are discussed and comparedwith other literatures.The lateral uniformity problem has been emphasizes.
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