| Citation: |
Liu Guojun, Xu Li, Shi Quanlin, Wang Xixiang, Zhang Qianyong. Research on growth rate uniformity in horizontal MOCVD systems[J]. LASER TECHNOLOGY, 1994, 18(4): 220-224.
|
| [1] |
Vandeven J, Rutten G M J. Raaijmakers M J. J Crystal Growth.1986;176,352
|
| [1] |
Ouazzani J. Chiu K C. Rosenherger F. J Crystal Growth. 1988,91,497
|
| [2] |
Ouazzani J. Rosenherger F. J Crystal Growth, 1990;100;545
|
| [3] |
Lee P, McKenna D. Kapur D. J Crystal Growth, 1986177,120
|
| [4] |
Stock L, Richter W. J Crystal Growth. 1986:77,144
|
| [5] |
Matsumoto K. Itoh K, Tahuchi T et al.J Crystal Growth. 1986:77,151
|
| [6] |
lkeda M. Kojima S, Kashiwayanagi Y. J Crystal Growths 1986;77,157
|
| [7] |
Landgren G. Andersson S G. Andersson J Y. J Crystal Growth. 1986;77,67
|
| [8] |
Soga T, Takahshi Y, Sakai S et al. J Crystal Growth. 1984;68;169
|
| [9] |
Woffat H. Jensen K. J Crystal Growth, 1986:77,108
|
| [10] |
Evans G H, Greif R. Computational mechanics division sandia national laboratories. CA94550 SAND86-8843, Liver-more;JUly, 1986
|
| [11] |
Fotiadis D I. Boekholt M. Jensen K F. J Crystal Growth. 1990,100,577
|
| [12] |
Fotiadis D I, Kieda S. J Crystal Growth,1990;102:441
|
| [13] |
Jensen K F. J Crystal Growth. 1991;107:1
|
| [14] |
Holmes D E. Chem Engng Sci. 1986:23,717
|
DownLoad: