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Volume 18 Issue 1
Sep.  2013
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Ion-assisted deposition using a new plasma source

  • Received Date: 1993-08-03
  • The principles of plasma ion-assisted deposition(IAD)and a new high vacuum plasma sotirce are introduced.With a hollow cold cathode discharge,the plasma sotirce can be operated in ambient pressure from 1×10-3pa to 1×10-1pa,the reactive gas and the nonreactive gas can be used as working gas.The energy of Ar- in argon plasma,h1eatstired with a Longmuir probe,is 50~80eV,depending on pressure and discharge current density.It has been experimentally confirmed that both the optical properties and mechanical properties of single-layer films of ZnS and SiO2 prepared in argon plasma and oxygen plasma have been improved considerably as compared to those films obtained with traditional vapor deposition.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Ion-assisted deposition using a new plasma source

  • 1. Department of optoelectronics Science and Technology, Sichuan University

Abstract: The principles of plasma ion-assisted deposition(IAD)and a new high vacuum plasma sotirce are introduced.With a hollow cold cathode discharge,the plasma sotirce can be operated in ambient pressure from 1×10-3pa to 1×10-1pa,the reactive gas and the nonreactive gas can be used as working gas.The energy of Ar- in argon plasma,h1eatstired with a Longmuir probe,is 50~80eV,depending on pressure and discharge current density.It has been experimentally confirmed that both the optical properties and mechanical properties of single-layer films of ZnS and SiO2 prepared in argon plasma and oxygen plasma have been improved considerably as compared to those films obtained with traditional vapor deposition.

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