CO2 laser chemical vapor deposition of a-Si:H film
- Received Date: 1990-06-05
- Accepted Date: 1991-01-29
- Available Online: 1991-05-25
Abstract: Amorphous hydrogenated silicon (a-Si:H) film have been produced by laser chemical vapor deposition, there a 50W CO2 laser is used to excite silane (SiH4). Deposition rate up to 200/min is achieved. The films are confirmed to be amorphous. The ratio of measured photo-conductivity and dark-conductivity of the films reaches 104 orders of magnitudes visible spectroscopic techniques. Value of optical gap is of 1.44~2.00eV. Deposition rate, photo-conductivity,dark-conductivity and optical gap, as the function of substrate temperature,are obtained. The chemical vapor deposition mechanism of a-Si:H film is described.