Design of high-precision pulse power supply for high-power semiconductor laser

In order to meet the practical needs of high-power semiconductor laser pulse application, aiming at the problem of flat top current drop in a single pulse and the reduction of current stability in the case of repeatability, a high-precision and high stability pulse driving power supply with adjustable multi parameters and wide range was designed. The high-power field-effect transistor was took as the core of the power supply. The rising edge regulation and gate control voltage compensation in a single pulse can be obtianed through the high-precision timing waveform generated by the field-programmable gate array. The high and stable output of current under repeated frequency operation was realized through the closed-loop control scheme of microcontroller combined with current sampling. The results show that, when the output current, pulse width, and repetition rate of the loaded diode with maximum power output is respectively 100 A, 400 μs, and 1 kHz, the overshoot amplitude of the rising edge of the driving current is less than 0.5%, the current attenuation in a single pulse is less than 0.2%, and the instability of the repetition rate pulse is less than 0.1%. When the semiconductor laser is driven under the same output conditions, the optical power overshoot in a single pulse is less than 2%, and the instability of repeated optical pulses is less than 0.2%. This research is helpful to improve the stability of pulse current of pulse power supply, and has certain reference significance for the improvement of existing pulse power supply structure.