Study on interference of near-infrared laser to charge-coupled device detector

ZHANG Ya'nan; NIU Chunhui; ZHAO Shuang; LV Yong

doi:10.7510/jgjs.issn.1001-3806.2020.04.004

LASER TECHNOLOGY > 2020 > 44(4): 418-423. > DOI: 10.7510/jgjs.issn.1001-3806.2020.04.004

ZHANG Ya'nan, NIU Chunhui, ZHAO Shuang, LV Yong. Study on interference of near-infrared laser to charge-coupled device detector[J]. LASER TECHNOLOGY, 2020, 44(4): 418-423. DOI: 10.7510/jgjs.issn.1001-3806.2020.04.004

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Study on interference of near-infrared laser to charge-coupled device detector

School of Instrument Science and Opto-Electronics Engineering, Beijing Information and Science & Technology University, Beijing 100192, China

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Received Date: September 10, 2019
Revised Date: October 14, 2019
Published Date: July 24, 2020

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Abstract

Abstract

In order to study the interference mechanism of near-infrared laser to image sensor, a monochromatic charge-coupled device(CCD) detector was irradiated by continuous laser with a wavelength of 1064nm. The interference phenomenon of laser to monochromatic camera was observed and the digital image collected by the experiment was processed. And the interference degree curves of monochromatic camera under different laser powers were extracted. After analysis, the following conclusions were obtained: CCD interference includes interference spot and crosstalk line. The higher the laser power is, the larger the interference spot radius is, and the crosstalk line is slowly widened. The more number of saturated pixels in the corresponding interference region, the more serious the interference degree. For the interference of 1064nm laser to monochromatic camera, the number of saturated pixels is almost linearly proportional to the laser power. Analysis of the new phenomena of regular dot-matrix and side-by-side crosstalk appearing in experimental phenomena is related to Fourier spectral properties of optical lenses. The fitting curve of the general interference process is derived by using the relevant formula. Finally, the interference process is simulated according to the characteristics of the CCD basic pixel structure capacitor potential trap and the carrier overflow mode. The simulation results are basically consistent with the experimental data.
- laser technique,
- data fitting,
- digital image processin,
- laser interference,
- saturated pixel,
- metal oxide semiconductor structure

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