ANSYS analysis of force-electric conversion of floating diaphragm for GaN-based micro-cavity sensors

ZHU Yanxu; DU Zhijuan; LIU Feifei; YU Ning; WANG Yuehua; SONG Huihui; WANG Honghang

doi:10.7510/jgjs.issn.1001-3806.2016.06.004

In order to figure out piezoelectric effect and mechanical properties of GaN film, a physics-based model was proposed in this study. Based on the theory that gas absorbed infrared directly, micro-cavity infrared sensor with GaN/AlGaN floating membrane was put as background and AlGaN/GaN floating membrane was put as sensitive element. After theoretical analysis and experimental verification of materials mechanics and piezoelectric effect by using finite element analysis software ANSYS 14.0, datas of the logical relationship between output voltage, membrane sensitivity and shapes, thickness, area were gotten, and the feasibility of membrane force-electric signal conversion mechanism was verified. The results show that GaN film has good piezoelectric performance and linearity which make a good contribution to forecast the sensor output signal accurately and make temperature compensation. The proposed model is useful to make a theoretical foundation for better design of micro cavity infrared sensor with good performance and high sensitivity.

ANSYS analysis of force-electric conversion of floating diaphragm for GaN-based micro-cavity sensors

1. Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China;

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528400, China

Received Date: 2015-10-08

Accepted Date: 2015-11-26

Available Online: 2016-11-25

Abstract: In order to figure out piezoelectric effect and mechanical properties of GaN film, a physics-based model was proposed in this study. Based on the theory that gas absorbed infrared directly, micro-cavity infrared sensor with GaN/AlGaN floating membrane was put as background and AlGaN/GaN floating membrane was put as sensitive element. After theoretical analysis and experimental verification of materials mechanics and piezoelectric effect by using finite element analysis software ANSYS 14.0, datas of the logical relationship between output voltage, membrane sensitivity and shapes, thickness, area were gotten, and the feasibility of membrane force-electric signal conversion mechanism was verified. The results show that GaN film has good piezoelectric performance and linearity which make a good contribution to forecast the sensor output signal accurately and make temperature compensation. The proposed model is useful to make a theoretical foundation for better design of micro cavity infrared sensor with good performance and high sensitivity.

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Reference (18)

[1]	CHEN S H,DAI Y T,XIAO X, et al. Investigation on laser polishing of GaN film using deep ultraviolet laser[J]. Laser Technology, 2012, 36(1):13-16(in Chinese).
[2]	LIU X X, HUANG R, YAO G, et al. Numerical simulation of the temperature field of laser butt welding of titanium alloy sheet[J]. Laser Technology, 2013, 37(5):700-703(in Chinese).
[3]	SHAO H M, ZHANG S L, XIE S, et al. Research of AlGaN/GaN PIN solar-blind ultraviolet photodetector with back-illumination[J]. Journal of OptoelectronicsLaser, 2011, 22(7):984-986(in Chinese).
[4]	JIANG L. The simulation research of theory model of multi-pizoelectric effect on piezoelectric material[D]. Dalian:Dalian University of Technology,2007:16-22(in Chinese).
[5]	BAI W. Effect of different templates on structure evolution and large strain response under a low electric field in -textured lead-free BNT-based piezoelectric ceramics[J]. Journal of the European Ceramic Society, 2015, 35(9):2489-2499.
[6]	TAO H F,YANG Z X,SONG Y G, et al. The research of laser treatment of GaN thin film[J]. Laser Technology, 2005, 29(6):652-656(in Chinese).
[7]	KUROKAWA F, MORI A, TSUJIURA Y, et al. Compositional dependence of Ba(Zr0.2Ti0.8)O3-(Ba0.7Ca0.3)TiO3 piezoelectric thin films prepared by combinatorial sputtering[J]. Thin Solid Films, 2015, 588:34-38.
[8]	LIN L.ANSYS finite element analysis of piezoelectric ceramic materials based on ANSYS[J]. Sience Technology Information,2009, 36:39-40(in Chinese).
[9]	LOU L F, YANG Y T, ZHANG J Q, et al. Application of ansys to the piezoelectric analysis of PZT piezoelectric thin film microsensor[J].Mechanical Science and Technology, 2005, 24(7):875-878(in Chinese).
[10]	SUO X D. Simulation and deformation analysis of CMUT diaphragm[D]. Guangzhou:South China University of Technology, 2013:19-37(in Chinese).
[11]	ZHANG J. On the piezoelectric potential of gallium nitride nanotubes[J].Nano Energy, 2015, 12:322-330.
[12]	KANG B S, KIM S, REN F, et al. Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes[J]. Applied Physics Letters,2004,85(14):2962-2964.
[13]	KANG B S, KIM J, JANG S, et al. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane[J]. Applied Physics Letters,2005,86(25):253502.
[14]	EICKHOFF M, AMBACHER O. Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterstructures[J]. Journal of Applied Physics,2001, 90(7):3383-3386.
[15]	MULLER A.GaN membrane metal-semiconductor-metal ultraviolet photodetector.Applied Optics, 2008, 47(10):1453-1459.
[16]	MIAO J, ZHU R G. The finite element of twin piezoelectric micro cantilever based on ansys[J]. Piezoelectrics Acoustooptics, 2011, 33(4):557-565(in Chinese).
[17]	LI L,SHEN G D,ZOU D S, et al. Principle and design of an ir detectors for a novel room temperature MEMS[J]. Opto-Electronic Engineering,2004,31(2):34-43(in Chinese).
[18]	LI L J. Design and fabrication of micromechanical membrane[J]. Microfabrication Technology Journal of Electron Devices, 1999, 22(3):177-181(in Chinese).

ANSYS analysis of force-electric conversion of floating diaphragm for GaN-based micro-cavity sensors

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