Advanced Search
YIN Guangyue, YOU Libing, FANG Xiaodong. ELA-beam shaping systems for flat panel display prepared by LTPS[J]. LASER TECHNOLOGY, 2016, 40(3): 383-387. DOI: 10.7510/jgjs.issn.1001-3806.2016.03.017
Citation: YIN Guangyue, YOU Libing, FANG Xiaodong. ELA-beam shaping systems for flat panel display prepared by LTPS[J]. LASER TECHNOLOGY, 2016, 40(3): 383-387. DOI: 10.7510/jgjs.issn.1001-3806.2016.03.017

ELA-beam shaping systems for flat panel display prepared by LTPS

More Information
  • Received Date: March 24, 2015
  • Revised Date: April 06, 2015
  • Published Date: May 24, 2016
  • The advantages to poly silicon film instead of amorphous silicon film in the field of flat panel display were introduced. Crystallization process of poly silicon film by using excimer laser crystallization system was studied. The principle of how lens array achieve the uniformity of output laser energy density was described. The structure of typical excimer laser annealing(ELA) line beam shaping system, which included beam expanding unit, beam energy homogenizing unit, projection unit and so on was focused on. Finally the application of sequential lateral solidification technology in the area of low temperature poly silicon(LTPS) using excimer laser nnealing was introduced. The status of ELA optical system was discussed and its significance in flat panel display industry was pointed out.
  • [1]
    YIN S, LIU C, ZHONG Z Y, et al. The development of low temperature poly-Si TFT technology[J]. Advanced Display,2003, 35(1):33-37(in Chinese).
    [2]
    IM J S, KIM H J, THOMPSON M O. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films[J]. Applied Physics Letters, 1993, 63(14):1969-1971.
    [3]
    MARIUCCI L, CARLUCCIO R, PECORA A, et al. Lateral growth control in excimer laser crystallized polysilicon[J]. Thin Solid Films, 1999, 337(1):137-142.
    [4]
    YAN Y J, DAI Y B, WANG J, et al. Progress in the research of poly Si film for TFT prepared by excimer laser crystallization[J]. Micro-electronics, 2006, 36(1):70-74(in Chinese).
    [5]
    SPOSILI R S, IM J S. Sequential lateral solidification of thin silicon films on SiO2[J]. Applied Physics Letters, 1996, 69(19):2864-2866.
    [6]
    LI H X, LOU Q H, DONG J X, et al. A novel homogenizer to improve the excimer laser beam uniformity[J]. Chinese Journal of Lasers, 2004, 31(7):785-788(in Chinese).
    [7]
    LI C D, CHEN T, ZUO T C. Design of fly's eye homogenizer for excimer laser micromachining[J]. Chinese Journal of Lasers, 1999, 26(6):560-564(in Chinese).
    [8]
    KUANG L J, ZHAI J H, RUAN Y, et al. Characteristics of fly-eye lens in uniform illumination system[J]. Optics Optoelectronic Technology, 2005, 3(6):29-31(in Chinese).
    [9]
    HUANG W, YU H Y, LI Y. Effect of relative position error in microlens arrays pair on beam homogenization[J]. Laser Technology, 2013, 37(1):11-15(in Chinese).
    [10]
    KAHLERT H J, BURGHARDT B, SIMON F, et al. High resolution optics for thin Si-film crystallization using excimer lasers:present status and future development[J].Proceedings of the SPIE, 2003, 5004:20-27.
    [11]
    FIEBIG M, OSMANOV R, STAMM U, et al. High-power excimer lasers for high-throughput poly-Si annealing[J].Proceedings of the SPIE,2000, 3888:464-469.
    [12]
    FECHNER B, SCHIWEK M, KAHLERT H J, et al. 300W XeClexcimerlaser annealing and sequential lateral solidification in low temperature poly silicon technology[J].Proceedings of the SPIE,2003, 4830:283-286.
    [13]
    YAMAZAKI S, TERAMOTO S, KUSUMOTO N, et al. Apparatus and method for laser radiation:US Patent 6215595[P]. 2001-04-10.
    [14]
    YAMAZAKI S, TANAKA K, TERAMOTO S. Laser irradiation apparatus:US Patent 6441965[P]. 2002-08-27.
    [15]
    TANAKA K. Laser irradiation apparatus and method:US Patent 6104535[P]. 2000-08-15.
    [16]
    IM J S, SPOSILI R S, CROWDER M A. Single-crystal Si films for thin-film transistor devices[J]. Applied Physics Letters, 1997, 70(25):3434-3436.
    [17]
    VOUTSAS A T, LIMANOV A, IM J S. Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films[J]. Journal of Applied Physics, 2003, 94(12):7445-7452.
    [18]
    CROWDER M A, VOUTSAS A T, DROES S R, et al. Sequential lateral solidification processing for polycrystalline Si TFTs[J].IEEE Transactions on Electron Devices,2004, 51(4):560-568.
  • Cited by

    Periodical cited type(3)

    1. 郑昕,戴深宇,张玉莹,赵帅. 基于微透镜阵列的大功率紫外激光匀化技术. 光学学报. 2023(10): 195-204 .
    2. 韩志慧. 线上电子显微镜在面板显示中的应用. 电子制作. 2021(14): 92-94 .
    3. 潘红响,苏宙平. 离轴双反射自由曲面激光整形系统的设计. 激光与光电子学进展. 2020(07): 189-195 .

    Other cited types(3)

Catalog

    Article views (7) PDF downloads (5) Cited by(6)

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return