[1]
|
YIN S, LIU C, ZHONG Z Y, et al. The development of low temperature poly-Si TFT technology[J]. Advanced Display,2003, 35(1):33-37(in Chinese). |
[2]
|
IM J S, KIM H J, THOMPSON M O. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films[J]. Applied Physics Letters, 1993, 63(14):1969-1971. |
[3]
|
MARIUCCI L, CARLUCCIO R, PECORA A, et al. Lateral growth control in excimer laser crystallized polysilicon[J]. Thin Solid Films, 1999, 337(1):137-142. |
[4]
|
YAN Y J, DAI Y B, WANG J, et al. Progress in the research of poly Si film for TFT prepared by excimer laser crystallization[J]. Micro-electronics, 2006, 36(1):70-74(in Chinese). |
[5]
|
SPOSILI R S, IM J S. Sequential lateral solidification of thin silicon films on SiO2[J]. Applied Physics Letters, 1996, 69(19):2864-2866. |
[6]
|
LI H X, LOU Q H, DONG J X, et al. A novel homogenizer to improve the excimer laser beam uniformity[J]. Chinese Journal of Lasers, 2004, 31(7):785-788(in Chinese). |
[7]
|
LI C D, CHEN T, ZUO T C. Design of fly's eye homogenizer for excimer laser micromachining[J]. Chinese Journal of Lasers, 1999, 26(6):560-564(in Chinese). |
[8]
|
KUANG L J, ZHAI J H, RUAN Y, et al. Characteristics of fly-eye lens in uniform illumination system[J]. Optics Optoelectronic Technology, 2005, 3(6):29-31(in Chinese). |
[9]
|
HUANG W, YU H Y, LI Y. Effect of relative position error in microlens arrays pair on beam homogenization[J]. Laser Technology, 2013, 37(1):11-15(in Chinese). |
[10]
|
KAHLERT H J, BURGHARDT B, SIMON F, et al. High resolution optics for thin Si-film crystallization using excimer lasers:present status and future development[J].Proceedings of the SPIE, 2003, 5004:20-27. |
[11]
|
FIEBIG M, OSMANOV R, STAMM U, et al. High-power excimer lasers for high-throughput poly-Si annealing[J].Proceedings of the SPIE,2000, 3888:464-469. |
[12]
|
FECHNER B, SCHIWEK M, KAHLERT H J, et al. 300W XeClexcimerlaser annealing and sequential lateral solidification in low temperature poly silicon technology[J].Proceedings of the SPIE,2003, 4830:283-286. |
[13]
|
YAMAZAKI S, TERAMOTO S, KUSUMOTO N, et al. Apparatus and method for laser radiation:US Patent 6215595[P]. 2001-04-10. |
[14]
|
YAMAZAKI S, TANAKA K, TERAMOTO S. Laser irradiation apparatus:US Patent 6441965[P]. 2002-08-27. |
[15]
|
TANAKA K. Laser irradiation apparatus and method:US Patent 6104535[P]. 2000-08-15. |
[16]
|
IM J S, SPOSILI R S, CROWDER M A. Single-crystal Si films for thin-film transistor devices[J]. Applied Physics Letters, 1997, 70(25):3434-3436. |
[17]
|
VOUTSAS A T, LIMANOV A, IM J S. Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films[J]. Journal of Applied Physics, 2003, 94(12):7445-7452. |
[18]
|
CROWDER M A, VOUTSAS A T, DROES S R, et al. Sequential lateral solidification processing for polycrystalline Si TFTs[J].IEEE Transactions on Electron Devices,2004, 51(4):560-568. |