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XIE Xiaozhu, GAO Xunyin, CHEN Weifang, WEI Xin, HU Wei. Study on scribing parameters of sapphire substrate with pulse green laser[J]. LASER TECHNOLOGY, 2014, 38(5): 632-637. DOI: 10.7510/jgjs.issn.1001-3806.2014.05.012
Citation: XIE Xiaozhu, GAO Xunyin, CHEN Weifang, WEI Xin, HU Wei. Study on scribing parameters of sapphire substrate with pulse green laser[J]. LASER TECHNOLOGY, 2014, 38(5): 632-637. DOI: 10.7510/jgjs.issn.1001-3806.2014.05.012

Study on scribing parameters of sapphire substrate with pulse green laser

  • To improve the yield rate and scribing efficiency of sapphire substrate, the effect of polarization direction, laser power, focus position, cutting speed, scanning times on the scribing quality of sapphire substrate with pulse green laser (λ=532nm) was studied.The results show that narrow and deep grooves can be obtained when the polarization direction is parallel to the incidence plane and the laser focus position is negative defocus 50μm when scribing sapphire substrate with pulse green laser. The groove depth and width increase while the pulse laser power increases. The groove depth decreases and the groove width increases at first and then decreases with the increase of the scanning speed. The groove depth and width increase with the increase of the scanning times. The results are helpful for selection of reasonable laser scribing technical parameters to achieve optimal groove performance.
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