Characteristics of Nd:Y3Al5O12 thin film prepared by electron beam evaporation deposition

Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information.New Si-based luminescent materials were developed to break the limits of Nd:YAG solid laser material,which was confined by two main solid states:single crystal and transparent ceramics.Nd:YAG thin film was prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphology,crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction,scanning electron microscopy and spectrophotometer.The crystallization of Nd:YAG thin film was improved after annealing at 1100℃ for 1h in the vacuum,photoluminescent spectra of Nd:YAG thin film were measured at room temperature,with 808nm radiation from a Ti:sapphire laser,and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array.The results showed that Nd:YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.