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Volume 36 Issue 4
Apr.  2013
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Characteristics of Nd:Y3Al5O12 thin film prepared by electron beam evaporation deposition

  • Received Date: 2011-10-24
    Accepted Date: 2011-12-16
  • Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information.New Si-based luminescent materials were developed to break the limits of Nd:YAG solid laser material,which was confined by two main solid states:single crystal and transparent ceramics.Nd:YAG thin film was prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphology,crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction,scanning electron microscopy and spectrophotometer.The crystallization of Nd:YAG thin film was improved after annealing at 1100℃ for 1h in the vacuum,photoluminescent spectra of Nd:YAG thin film were measured at room temperature,with 808nm radiation from a Ti:sapphire laser,and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array.The results showed that Nd:YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.
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  • [1]

    LI X,LIU H,WANG J Y,et al.Progress in transparent polycrystalline aluminum-yttrium garnet laser ceramic[J].Journal of Chinese Ceramic Society,2004,32(4):485-489(in Chinese).
    [2]

    SHI J L,FENG T.Inorganic optical transparent materials-transparent ceramics[M].Shanghai:Shanghai Popular Science Press,2008:60-72 (in Chinese).
    [3]

    EAKINS D K,HELD M,NORTON M G,et al.A study of fracture and defects in single crystal YAG[J].Journal of Crystal Growth,2004,267 (3/4):502-509.
    [4]

    MAO Y L,Q1U H W,XU J,et al.Spectra and laser characteristics of high-doped Nd:YAG laser crystals[J].Acta Optica Sinica,2001,21 (10):1264-1267 (in Chinese).
    [5]

    YANG R,TAO Z L,QIN J.Phase composition and luminescence properties of neodymium-doped yttrium aluminum gsrnet (Nd:YAG)ceramic powders[J].Journal of Beijing University of Chemical.Technology,2009,36(4):54-59(in Chinese).
    [6]

    SUAREZ M,FERNANDEZ J,MENENDEZ J L,et al.Hot isostatic pressing of optically active Nd:YAG powders doped by a colloidal processing route[J].Journal of the European Ceramic Society,2010,30(6):1489-1494.
    [7]

    MA H X,LOU Q H,QI Y F,et al.Spectrum characteristics of the polycrystalline transparent ceramic[J].Laser Technology,2004,28(5):488-490(in Chinese).
    [8]

    LUPEI V,LUPEI A,LKESUE A.Single crystal and transparent ceramic Nd-doped oxide laser materials:a comparative spectroscopic investigation[J].Journal of Alloys and Compounds,2004,380(1/2):61-70.
    [9]

    FELDMAN R,GOLAN Y,BURSHTEIN Z,et al.Strengthening of poly-crystalline (ceramic) Nd:YAG elements for high-power laser applications[J].Optical Materials,2011,33(5):695-701.
    [10]

    FIELD S J,HANNA D C,LARGE A C,et al.Low thteslold ionimplanted Nd:YAG channel waveguide laser[J].Electronics Letters,1991,27 (25):2375-2376.
    [11]

    HANNA D C,LARGE A C,SHEPHERD D P,et al.Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:Y3Al5012 waveguide[J].Applied Physics Letters,1993,63(1):7-9.
    [12]

    FERRAND B,PELENC D,CHARTIER I.Growth by LPE of Nd:YAG single crystal layers for waveguide laser applications[J].Journal of Crystal Growth,1993,128 (1/4):966-969.
    [13]

    SUN Z H,YUAN D R,DUAN X L,et al.Preparation of YAG mateiials by sol-gel method[J].Journal of Chinese Ceramic Society,2004,32(4):59-62(in Chinese).
    [14]

    WU Y C,PAROLA S,MARTY O,et al.Strucural characterizations and waveguiding properties of YAG thin films obtained by different solgel processes[J].Optical Materials,2005,27(9):1471-1479.
    [15]

    EZAKI M,OBAPA M,KUMAGM H,et al.Characterization of Nd:Y3Al5O12 thin films gown on various substrates by pulsed laser deposition[J].Applied Physics Letters,1996,69(20):2977-2979.
    [16]

    REMSA J,JELINEK M,KOCOUREK T,et al.Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing[J].Applied Surface Science,2009,2.55(10):5292-5294.
    [17]

    REN H,PANG Z H,ZEN Q.Preparation of Nd:YAG ceramics materials by vacuum electron beam sintering method[J].Mechanical & Electrical Engineering Technology,2011,40(11):46-48 (in Chinese).
    [18]

    LI J,WU Y,PAN Y,et al.Solid-state-reaction fabrication and properties of high-doping Nd:YAG transparent laser ceramic[J].Journal of Chinese Ceramic Society,2007,35 (12):1600-1604(in Chinese).
    [19]

    LI X X,LI J T,HU Z G,Preparation of poly crystalline Nd:YAG nanopowders used for sintering transparent laser ceramics via lowtemperature combustion method[J].Journal of the Chinese Rare Earth Society,2007,25(4):483-486 (in Chinese).
    [20]

    LIU S H,LI C F.Photonics technology and application[M].Guangzhou:Guangdong Science and Technology Press,2006:121-124(in Chinese).
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通讯作者: 陈斌, bchen63@163.com
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Characteristics of Nd:Y3Al5O12 thin film prepared by electron beam evaporation deposition

  • 1. School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China;
  • 2. Guangzhou Research Institute of Optics-Mechanics-Electricity Technology, Guangzhou 510663, China

Abstract: Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information.New Si-based luminescent materials were developed to break the limits of Nd:YAG solid laser material,which was confined by two main solid states:single crystal and transparent ceramics.Nd:YAG thin film was prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphology,crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction,scanning electron microscopy and spectrophotometer.The crystallization of Nd:YAG thin film was improved after annealing at 1100℃ for 1h in the vacuum,photoluminescent spectra of Nd:YAG thin film were measured at room temperature,with 808nm radiation from a Ti:sapphire laser,and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array.The results showed that Nd:YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.

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