Substrate-etched high power external-cavity surface-emitting lasers

WU Yu; NI Yan-hai; DAI Te-li; ZHOU Yong; QIN Li; LIANG Yi-ping; FAN Si-qiang; ZHANG Peng

doi:10.3969/j.issn.1001-3806.2012.02.014

LASER TECHNOLOGY > 2012 > 36(2): 200-203. > DOI: 10.3969/j.issn.1001-3806.2012.02.014

WU Yu, NI Yan-hai, DAI Te-li, ZHOU Yong, QIN Li, LIANG Yi-ping, FAN Si-qiang, ZHANG Peng. Substrate-etched high power external-cavity surface-emitting lasers[J]. LASER TECHNOLOGY, 2012, 36(2): 200-203. DOI: 10.3969/j.issn.1001-3806.2012.02.014

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Substrate-etched high power external-cavity surface-emitting lasers

WU Yu^1,2,
NI Yan-hai^1,2,
DAI Te-li^1,2,
ZHOU Yong³,
QIN Li⁴,
LIANG Yi-ping^1,2,
FAN Si-qiang^1,2,
ZHANG Peng^1,2, ,

1.
College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China;
2.
Chongqing High Education Key Laboratory of Optical Engineering, Chongqing Normal University, Chongqing 400047, China;
3.
The 44th Research Institute, China Electronics Technology Croup Corporation, Chongqing 400060, China;
4.
Changchun Institute of Opties, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, China

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Received Date: July 07, 2011
Revised Date: July 11, 2011
Published Date: March 24, 2012

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Abstract

To decrease the thermal effect of a vertical-external-cavity surface-emitting laser and increase its output power,a high thermal conductivity SiC heatspreader was bond on the reverse-order semiconductor wafer with the capillary method,and then the substrate was removed by means of chemical etch.The characteristics of the laser formed by the substrate-etched wafer were experimentally studied.When the active region in the gain structure is InGaAs/AlGaAs multiple quantum wells,the pump source is a fiber-coupled 808nm diode laser,and the transmission of the output coupler is 3% at laser wavelength,the TEM00 mode output power of 0.52W and the optical-to-optical conversion efficiency of 20% are obtained at room temperature.The laser wavelength is 1018nm,and the spectrum width is 2nm(full width half maximum).The measured M2 factor in x and y direction of 1.01 and 1.00 demonstrate the near diffraction-limited Gaussian beam of the laser.It can be concluded that the substrate-etching technology can significantly improve the thermal property of vertical-external-cavity surface-emitting lasers and results in high power and high beam quality.
- lasers,
- external-cavity surface-emitting laser,
- multiple quantum well,
- substrate-etched,
- optically-pumped

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References

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