Experimental study on 532nm laser-induced failure of array and linear CCD

LIAO Hai; SUN Nian-chun; FENG Guo-ying; ZHOU Chuan-ming

doi:10.3969/j.issn.1001-3806.2010.O5.018

The mechanism of damage on the linear CCD and array CCD was analyzed. Under the irradiation of 532nm laser, the crosstalk threshold, all-pixel crosstalk threshold and totally damaged threshold of both the types of CCDs were measured. Experimental results show that the crosstalk threshold and permanent damage threshold of array CCD are higher than those of linear CCD,while the all-pixel crosstalk threshold of array CCD is lower.This reflects the linear CCD is more resistant to laser interference and sabotage due to its one-dimension structure, while the array CCD is better at resisting the spread of crosstalk between pixels.

Experimental study on 532nm laser-induced failure of array and linear CCD

Corresponding author: SUN Nian-chun, E-mail.8178137@163.com;

1. College of Electronics and Information Technology, Sichuan University, Chengdu 610064, China;

2. Science and Technology Commission, China Academy of Engineering Physics, Mianyang 621900, China

Received Date: 2009-09-18

Accepted Date: 2009-10-23

Available Online: 2010-09-25

Abstract: The mechanism of damage on the linear CCD and array CCD was analyzed. Under the irradiation of 532nm laser, the crosstalk threshold, all-pixel crosstalk threshold and totally damaged threshold of both the types of CCDs were measured. Experimental results show that the crosstalk threshold and permanent damage threshold of array CCD are higher than those of linear CCD,while the all-pixel crosstalk threshold of array CCD is lower.This reflects the linear CCD is more resistant to laser interference and sabotage due to its one-dimension structure, while the array CCD is better at resisting the spread of crosstalk between pixels.

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Reference (11)

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Experimental study on 532nm laser-induced failure of array and linear CCD

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通讯作者: 陈斌, bchen63@163.com

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