Micromachining technology of sapphire substrate based on 157nm DUV laser

BAI Fan; DAI Yu-tang; XU Gang; CUI Jian-lei

doi:10.3969/j.issn.1001-3806.2010.O5.016

LASER TECHNOLOGY > 2010 > 34(5): 636-639. > DOI: 10.3969/j.issn.1001-3806.2010.O5.016

BAI Fan, DAI Yu-tang, XU Gang, CUI Jian-lei. Micromachining technology of sapphire substrate based on 157nm DUV laser[J]. LASER TECHNOLOGY, 2010, 34(5): 636-639. DOI: 10.3969/j.issn.1001-3806.2010.O5.016

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Micromachining technology of sapphire substrate based on 157nm DUV laser

Key Laboratory of Fiber Optic Sensing Technology, Wuhan University of Technology, Wuhan 430070, China

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Received Date: August 14, 2009
Revised Date: September 09, 2009
Published Date: September 24, 2010

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Abstract

In order to probe micromachining technology of sapphire material,the ablation characteristics of 157nm deep ultraviolet laser were studied. The effect of laser process parameters on etching efficiency and surface quality was studied by scanning ablation and drilling on sapphire substrate. Moreover, the etching mechanism of 157nm laser on sapphire was analyzed.And then,a 2-D pattern was ablated onto the sapphire substrate by scanning approach. Both analysis and experimental results indicate that micromachining process that 157nm deep ultraviolet laser reacts on sapphire includes photochemical reactions and photothermolysis,and that a set of proper parameters about scanning etching were obtained,i.e.,scanning velocity at 0.15 mm/min with flnence of 3.2J/cm2,repetition frequency at 10Hz-20Hz; etching rate of drilling at 0.039μm/pulse with fluence of 2.5J/cm2. Precise micromachining could be realized under control of laser repetition rate and scanning velocity.
- laser technique,
- 157nm deep ultraviolet laser,
- laser scanning ablation,
- drilling,
- micromachining,
- sapphire substrate

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