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LI Long, DONG Wu-wei, SHI Peng, GAN An-sheng, XU Qi-ming. Thermal effect of high power Yb:YAG microchip solid-state laser[J]. LASER TECHNOLOGY, 2010, 34(1): 8-12. DOI: 10.3969/j.issn.1001-3806.2010.01.003
Citation: LI Long, DONG Wu-wei, SHI Peng, GAN An-sheng, XU Qi-ming. Thermal effect of high power Yb:YAG microchip solid-state laser[J]. LASER TECHNOLOGY, 2010, 34(1): 8-12. DOI: 10.3969/j.issn.1001-3806.2010.01.003

Thermal effect of high power Yb:YAG microchip solid-state laser

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  • Received Date: January 05, 2009
  • Revised Date: March 02, 2009
  • Published Date: January 24, 2010
  • In order to study the nonuniform temperature rise and thermal effect in the Yb:YAG crystal, based on the theory of semi-analytical thermal analysis and working characteristic analysis of Yb:YAG microchip with super-Gaussian beam end-pumping and back-face cooling, a new solution of heat conduction equation was introduced and the general expressions of temperature field, thermal distortion field and additional optical path differences (OPD) of Yb:YAG microchip were obtained respectively. Some factors affecting the temperature distribution and thermal distortion of Yb:YAG microchip, such as the super-Gaussian beam with different orders,different spot radius, were quantitatively analyzed. If a Yb:YAG microchip with 0.08 atom fraction of ytterbium is end-pumped by the fifth order super-Gaussian beam with power of 50W in 300μm radius, its maximal temperature raise was up to 52.18℃ and its maximum thermal distortion was 0.1195μm and maximum additional OPD was 0.2152μm. The results can provide theoretical instruction for the heat insensitivity cavity design of microchip laser.
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