Progress of InGaAs nanowire avalanche focal plane detectors

ZHANG Wei; XU Qiang; XIE Xiumin; DENG Jie; QIN Wenzhi; HU Weiying; CHEN Jian; SONG Haizhi

doi:10.7510/jgjs.issn.1001-3806.2021.01.018

LASER TECHNOLOGY > 2021 > 45(1): 105-108. > DOI: 10.7510/jgjs.issn.1001-3806.2021.01.018

ZHANG Wei, XU Qiang, XIE Xiumin, DENG Jie, QIN Wenzhi, HU Weiying, CHEN Jian, SONG Haizhi. Progress of InGaAs nanowire avalanche focal plane detectors[J]. LASER TECHNOLOGY, 2021, 45(1): 105-108. DOI: 10.7510/jgjs.issn.1001-3806.2021.01.018

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Progress of InGaAs nanowire avalanche focal plane detectors

1.
Southwest Institute of Technical Physics, Chengdu 610041, China
2.
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

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Received Date: December 09, 2019
Revised Date: March 17, 2020
Published Date: January 24, 2021

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Abstract

Photodetectors based on InGaAs nanowires have been widely studied due to their excellent properties. The detection mechanism, material structure, device performance and current research status of InGaAs nanowire photodetectors were reviewed. The key technologies, such as the structure design of InGaAs nanowire avalanche focal plane detector, the precise growth of nanowire materials, the interface and defect control of nanowire materials, and the preparation process of nanowire avalanche focal plane devices were discussed. On this basis, the prospect of developing high photon detection efficiency, low noise and high gain InGaAs nanowire avalanche focal plane detector was prospected.
- sensor technique,
- avalanche focal plane detector,
- InGaAs nanowire array,
- photodiodes,
- detectors

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