半导体激光器加速寿命测试系统研制

详细信息

Development for semiconductor laser accelerating lifetime testing system

1.
Institute of Opto-electronic, Shijiazhuang University of Economics, Shijiazhuang 050031, China;
2.
Department of Communication, Xi'an Engineering College of Armed Police Force, Xi'an 710086, China;
3.
Department of Opto-electronic Engineering, Beijing Institute of Technology, Beijing 100081, China;
4.
Institute of Waterborne Transportation, Ministry of Communications, Beijing 100088, China

摘要: 介绍了半导体激光器(LD)加速寿命测试的理论依据,给出了寿命测试的数学模型,并据此研制了新型LD寿命测试系统。该系统在密封抽真空充氮环境下,通过采集恒功工作LD的工作电流随时间变化的信息及所处环境的温度,绘制出LD的老化曲线,即恒功条件下的“I-t曲线”,然后推断LD的使用寿命。
- 激光与光电子学 /
- 半导体激光器 /
- 加速寿命测试 /
- Arrhenius模型
Abstract: This paper introduces the theory of laser diode(LD)accelerating lifetime testing and mathematic model of life testing,based on wihich a new type of LDs burn-in & automatic life testing system was developed.It continuously samples the power of LDs which works under automatic current control and under the airproof condition filled with nitrogen at testing temperature,plots power-time curve of LD and deduces the working life of LD.
- laser and optoelectronics /
- semiconductor laser /
- accelerating lifetime testing /
- Arrhenius model

[1]	FRIEDHELM D,DAIMINGER F X.Aging tests of high-power diode lasers as a basis for an international lifetime standard[J].Proc SPIE,1996,2870:381～389.
[1]	BARRY J D,EINHORN A J,MECHERLE G S et al.Thermally accelerated life testing of single mode,double-heterostructure,AlGaAs laser diodes operated pulsed at 50mW peak power[J].IEEE J Q E,1985,QE21:365～376.
[2]	DILIP P K.High-power semiconductor diode lasers-Reliability data and lifetest methodology[A].Fiber Optics Reliability:Benign and Adverse Environments[C].Bellingham:Society of Photo-Optical Instrumentation Engineers,1987.86～94.
[3]	MASAYUKI I,HAJIME O,KAZUHIKO I et al.Long-term reliability tests for InGaAlP visible laser diodes[J].Japan J A P.1989,28:1615～1621.
[4]	SASAKI K,MATSUMOTO M,KONDO M et al.Highly reliablehigh-power AlGaAs laser with window grown on facets[J].Proc SPIE,1992,1634:204～209.
[5]	李红岩.半导体激光器可靠性研究[D].长春:吉林大学,1999.12.
[6]	中国科学技术情报研究所重庆分所《半导体器件的可靠性》编写组.半导体器件的可靠性[M].重庆:重庆科学技术文献出版社,1977.59.
[7]	黄德修,刘雪峰.半导体激光器及其应用[M].北京:国防工业出版社,1999.5.
[8]	江剑平.半导体激光器[M].北京:电子工业出版社,2000.333.
[9]	黄章勇.光电子器件和组件[M].北京:北京邮电大学出版社,2001.7.
[10]	Bellcore-GR-468-CORE-1998,Generic Requirements[S]:4-1～4-34;8-1～8-19.