Effect of negative thermal quenching on optoelectronic properties of acceptor-rich ZnO microtubes
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摘要: 为了研究ZnO本征缺陷种类与浓度对激子跃迁复合和载流子输运特性的影响，采用改进的光学气化过饱和析出法制备了本征富受主型ZnO(A-ZnO)微米管。通过氧气生长气氛实现了施主-受主对和中性受主束缚激子A0X的浓度调控，揭示了缺陷浓度调控中间态能级产生负热淬灭效应的机制。结果表明，通过提高浅受主缺陷浓度以及提升中间态能级位置，可将A-ZnO微米管的电阻率下降7倍，紫外光响应时间缩短51%，实现了A-ZnO微米管的导电性增强和高效紫外探测。此研究结果为ZnO微纳结构半导体光电器件性能调控提供了新思路。Abstract: The effect of intrinsic defect types and concentrations on the behaviors of exciton transitions and carrier transports in ZnO was investigated. The intrinsic acceptor-rich ZnO (A-ZnO) microtubes were grown by the developed optical vapor supersaturation precipitation. The oxygen growth carries gas (O2) was used to realize the regulation of donor acceptor pair and neutral acceptor bound exciton A0X concentrations. The negative thermal quenching phenomenon was attributed to the middle energy state dominated by the defect concentrations. The abundant shallow acceptor concentrations and the middle energy state shifting up result in the electrical resistivity reduction by 7 times and the response time decreasing by 51% compared with the A-ZnO microtubes grown in air, leading to the high-efficient ultraviolet detector with high electrical resistivity. The present work provides a novel platform to optimize ZnO-micro/nanostructures-based optoelectronic devices.
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特别感谢北京工业大学物理与光电工程学院赵艳老师在实验测试方面的帮助。
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图 1 A-ZnO微米管的形貌与结构表征
Figure 1. Morphologic and structural characterization of A-ZnO microtube
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图 3 a—A-ZnO微米管和air-ZnO微米管分别在300 K和80 K时的PL光谱 b~d—A-ZnO微米管在不同温度时的PL光谱
Figure 3. a—PL spectra of A-ZnO microtube and air-ZnO microtube at 300 K and 80 K respectively b~d—PL spectra of A-ZnO microtube at different temperature
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图 4 a—A-ZnO微米管的FA、FX和DAP发光峰强度随温度变化规律及其拟合曲线 b—A-ZnO微米管的FX和A0X发光峰能量随温度变化规律及其拟合曲线 c—air-ZnO微米管和A-ZnO微米管能带结构示意图
Figure 4. a—intensities of FA, FX and DAP emission of A-ZnO with temperature, and the corresponding fitting curves b—photon energies of FX and A0X emission of A-ZnO with temperature, and the corresponding fitting curves c—energy level diagrams of air-ZnO microtube and A-ZnO microtube, respectively
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图 5 a—A-ZnO微米管光电探测器结构示意图 b—A-ZnO微米管与air-ZnO微米管电流对应电压的变化曲线 c—不同光能量密度下A-ZnO微米管的光电流响应特性 d—A-ZnO微米管归一化的光电流响应特性
Figure 5. a—schematic of the A-ZnO microtube detector b—voltage corresponding to current of A-ZnO microtubes and air-ZnO microtubes c—photocurrent response of A-ZnO microtube under various light energy intensity d—the normalized photocurrent response of A-ZnO microtube
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