128-channel OPA based on SiN slab waveguide grating antenna
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摘要: 为了避免全硅光学相控阵(OPA)的输出光功率饱和现象以及氮化硅的低移相效率,采用硅与氮化硅相结合的设计思路, 在实现高功率输入的同时保证了调相效率;此外,硅基集成OPA为了避免通道间的相互耦合所引起的相位噪声,波导间距大于半波长,导致栅瓣的存在,进而使得扫描范围受限,故采用硅波导作为天线前的输入波导, 以减小阵元间距。结果表明,芯片最终实现了41°×7.4°的扫描范围以及10.7 dB的芯片损耗。该研究对于OPA芯片的进一步改进是有帮助的。Abstract: In order to avoid the saturation phenomenon of output optical power of all silicon optical phased array (OPA) and the low phase shifting efficiency of silicon nitride, a design concept combining silicon and silicon nitride was adopted, which ensured the phase shifting efficiency while achieving high power input. In addition, in order to avoid phase noise caused by mutual coupling between channels, silicon-based integrated OPA had waveguide spacing greater than half wavelength, which led to the presence of gate lobes and limited the scanning range. To solve this problem, a silicon waveguide was used as the input waveguide in front of the antenna to reduce the array elements spacing. The results show that, the chip ultimately achieves a scanning range of 41°×7.4° and a chip loss of 10.7 dB. This study is helpful for further improvement of OPA chips.
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Keywords:
- integrated optics /
- diffraction /
- gratings /
- optical phased array
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图 5 a—基于Si热光移相器的马赫-曾德尔调制器特性 b—级联SiN多模干涉耦合器各端口输出功率 c—Si和SiN波导模斑转换器的损耗
Figure 5. a—characterization of Mach-Zehnder modulator based on the silicon thermo-optic phase shifter b—output power at each port of the cascaded silicon nitride multimode interferometric coupler c—losses of silicon and silicon nitride waveguide spot size converters
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