Research on active quenching circuit based on single-photon detection of 4H-SiC APD
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摘要: 为了对比不同类型淬灭电路对4H-SiC雪崩光电二极管(APD)探测性能的影响，采用被动淬灭电路(PQC)和主动淬灭电路(AQC)，对两种类型SiC紫外APD进行了单光子探测实验，发现在PQC较长死区时间内，会频发后脉冲现象，导致APD的暗计数率(DCR)较高，从而降低器件的信噪比；对APD后脉冲概率的时间分布进行了研究，并进一步对AQC在更高器件过偏压下单光子探测中出现的问题进行了分析，提出了电路改进方案。结果表明，通过将AQC死区时间调整至45 ns，在相同单光子探测效率下，可将器件DCR减少至原先水平的1/4；通过有效抑制后脉冲和加快APD恢复速度，AQC可使器件展现出更加优越的探测性能。此研究为SiC APD在单光子探测中的应用提供了一定的参考。Abstract: In order to compare the effects of different types of quenching circuits on the detection performance of 4H-SiC avalanche photodiodes (APD), single-photon detection experiments were conducted on two types of SiC ultraviolet APD by using passive quenching circuits (PQC) and active quenching circuits (AQC). It was found that during a long dead time in PQC, post pulse phenomena occur frequently, resulting in a higher dark counting rate (DCR) of APD, thereby reducing the signal-to-noise ratio of the device. A study was conducted on the time distribution of pulse probability after APD, and further analysis was conducted on the problems encountered by AQC in single-photon detection under higher device bias. A circuit improvement plan was proposed. The research results indicate that by adjusting the dead time of AQC to 45 ns, the device DCR can be reduced to 1/4 of the original level under the same single-photon detection efficiency. By effectively suppressing post pulse and accelerating APD recovery speed, AQC can enable the device to exhibit superior detection performance. This study provides a certain reference for the application of SiC APD in single-photon detection.
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图 4 两种SiC APD光电流、暗电流以及增益-电压曲线
Figure 4. Photon current, dark current and gain-voltage characteristic of two types of SiC APD
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图 5 两种SiC APD被动淬灭模式下DCR和SPDE过偏压特性曲线
Figure 5. DCR and SPDE overbias characteristics of two types of SiC APD measured with PQC
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图 6 两种SiC APD的后脉冲概率随时间分布曲线
Figure 6. After-pulse probability vs. timecurves of two types of SiC APD
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图 7 基于PQC和AQC的SiC APD DCR-SPDE特性对比
Figure 7. Comparison of DCR-SPDE characteristics of SiC APD based on PQC and AQC
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