Thermal effect of high power Yb：YAG microchip solid-state laser
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摘要: 为了研究抽运光在Yb:YAG晶体内产生的非均匀性温升以及引起的热效应问题,以半解析热分析理论为基础,结合超高斯光束端面抽运、背向冷却Yb:YAG微片工作特点分析,采用热传导方程一种新的求解方法,得出了Yb:YAG微片内部温度场、热形变场、附加光程差的半解析计算表达式。并定量分析了超高斯光束不同阶次、不同光斑尺寸抽运时对于Yb:YAG微片温度场、热形变场的影响。结果表明,若使用50W、光斑半径300μm的5阶超高斯光束端面抽运掺镱离子原子数分数为0.08的Yb:YAG微片,抽运面上可获得52.18℃最高温升量,产生0.1195μm最大热形变,引起0.2152μm的附加光程差。该研究结果对于微片激光器热不敏谐振腔最优化设计具有理论指导作用。Abstract: In order to study the nonuniform temperature rise and thermal effect in the Yb:YAG crystal, based on the theory of semi-analytical thermal analysis and working characteristic analysis of Yb:YAG microchip with super-Gaussian beam end-pumping and back-face cooling, a new solution of heat conduction equation was introduced and the general expressions of temperature field, thermal distortion field and additional optical path differences (OPD) of Yb:YAG microchip were obtained respectively. Some factors affecting the temperature distribution and thermal distortion of Yb:YAG microchip, such as the super-Gaussian beam with different orders,different spot radius, were quantitatively analyzed. If a Yb:YAG microchip with 0.08 atom fraction of ytterbium is end-pumped by the fifth order super-Gaussian beam with power of 50W in 300μm radius, its maximal temperature raise was up to 52.18℃ and its maximum thermal distortion was 0.1195μm and maximum additional OPD was 0.2152μm. The results can provide theoretical instruction for the heat insensitivity cavity design of microchip laser.
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Keywords:
- lasers /
- microchip laser /
- Yb：YAG crystal /
- thermal effect /
- super-Gaussian beam /
- semi-analytical thermal analysis
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