KMgF3 crystal grown under CF4 atmosphere
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摘要: 为了获得高质量的KMgF3晶体,采用提拉法,在CF4气氛中进行了晶体生长.对生长过程中的挥发物和结晶余料进行了物相分析,并测试了晶体红外透射光谱.由测试结果可知,晶体生长过程中的主要挥发物为KF,析晶率较大时的结晶余料中出现MgF2相,红外光谱中未出现OH-的吸收,但COH的吸收比较明显.结果表明,CF4气氛有利于KMgF3晶体生长过程中H2O等氧源的消除,生长过程中有效地抑制KF的挥发并适当地补充KF,是KMgF3晶体生长中不可忽略的问题.Abstract: In order to obtain high-quality KMgF3 crystal,it was grown by Czochralski method in the CF4 atmosphere.The volatiles and remainders of the crystal growth were analyzed,and the infrared transmission spectrum of the crystals was measured.The main volatile matter is KF,and there is MgF2 phase in the remainders while crystallization rate is high.In the infrared transmission spectrum there is no OH- absorption,but COH absorption is obvious.Above results display that CF4 atmosphere is favorable for eliminating oxygen source of the growth atmosphere,such as H20 etc.To get high quality KMgF3 crystal,it is not negligible to inhibit the volatility of KF effectively and to replenish KF suitably in the crystal growth.
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Keywords:
- materials /
- crystal growth /
- Czochralski method /
- infrared spectra /
- CF4 atmosphere /
- KMgF3 crystal
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