Asymmetric Ge/SiGe coupled quantum well phase modulators
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摘要: 为了研究和论证锗硅材料体系在器件的工艺制备和理论性能上的优势，拓展锗硅量子阱结构的应用范围，采用数值仿真结合实际器件制备的方法，进行了理论分析和实验验证，设计了一种基于Ge/SiGe非对称耦合量子阱材料的光学相位调制器，并在实验测试中验证了该理论的正确性。结果表明，当电场超过40 kV/cm时，该材料在1450 nm波长处可以达到最高0.01的电致折射率变化；经测试发现，实际制备的器件在1.5 V的反向偏置电压下, 实现了1530 nm波长处2.4×10-3的电致折射率变化，对应的VπLπ=0.048 V·cm，在同类型锗硅光调制器中达到了先进水平。该研究为硅基集成光调制器的进一步发展开辟了新的方向。Abstract: The SiGe material system demonstrates the advantages of device fabrication and performance, also the unique characteristic of Ge/SiGe multi-quantum well structure expends the application range. A design of optical integrated phase modulator based on asymmetric Ge/SiGe coupled quantum well (CQW) was proposed in this paper. According to comprehensively analysis of asymmetric Ge/SiGe CQW structure by numerical simulation, the theory was verified by implementing the fabrication and measurement. It indicates that the maximum electrorefractive index variation up to 0.01 can be achieved by using the designed asymmetric CQW, while the applied electrical field exceeds 40 kV/cm at wavelength of 1450 nm. Moreover, the fabricated device attains the electrorefractive index variation 2.4×10-3 with 1.5 V reverse bias voltage and optical wavelength 1530 nm, and the corresponding VπLπ is as low as 0.048 V·cm. The asymmetric Ge/SiGe CQW phase modulator exhibits superior performance in the same type of modulators based on SiGe, and offers new opportunities to further development of optical integrated silicon modulators.
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图 1 a—锗硅耦合量子阱的整体外延设计 b—锗硅非对称耦合量子阱的示意图
Figure 1. a—epitaxy design of Ge/SiGe CQW b—sketch of Ge/SiGe asymmetric CQW
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图 2 不同电场强度下锗硅非对称耦合量子阱的光吸收谱
Figure 2. Absorption spectrums of asymmetric Ge/SiGe CQW with different applied electrical field
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图 3 不同电场强度下锗硅非对称耦合量子阱的电致折射率变化谱线
Figure 3. Electrorefractive index variation of asymmetric Ge/SiGe CQW with different applied electrical field
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图 5 在反向偏置电压变化时，光通信C波段的光谱响应
Figure 5. Spectral response at optical communication C-band under different reverse bias voltage
表 1 锗硅调制器性能对比
Table 1 Comparison of this work and other reported Ge/SiGe modulators
structural composition bias voltage/V wavelength/nm index variation VπLπ/(V·cm) reference [23] Ge/Si0.15Ge0.85 MQW 8 1475 1.3×10-3 0.46 reference [24] 7×[7 nm Ge QW+1.5 nm Si0.15Ge0.85 inner barrier+7 nm Ge QW+26 nm Si0.15Ge0.85 outer barrier] 1.5 1420 2.3×10-3 0.046 our study 8×[6 nm Ge QW+2 nm Si0.17Ge0.83 inner barrier+12 nm Ge QW+12 nm Si0.15Ge0.85 outer barrier] 1.5 1530 2.4×10-3 0.048 
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